AP9569GM Advanced Power Electronics Corp., AP9569GM Datasheet
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AP9569GM
Specifications of AP9569GM
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AP9569GM Summary of contents
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... J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP9569GM Pb Free Plating Product BV -40V DSS R 90mΩ DS(ON) I -4. Rating Units -40 ± 20 -4.2 -3.4 -40 2.5 0.02 W/℃ ...
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... AP9569GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1 =25 C 1.4 1.0 0.6 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 0.8 0.4 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9569GM o T =150 C A -10V -7.0V -5.0V -4.5V V =-3. Drain-to-Source Voltage ( -10V 100 o , Junction Temperature ( ...
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... AP9569GM - -30V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area Gate-to-Source Voltage (V) GS Fig 11 ...