AP9569GM Advanced Power Electronics Corp., AP9569GM Datasheet - Page 4

• Manufacturer Part Number: AP9569GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9569GM

• Vds: -40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 90
• Rds(on) / Max(m?) Vgs@4.5v: 130
• Qg (nc): 8
• Qgs (nc): 1.6
• Qgd (nc): 4
• Id(a): -4.2
• Pd(w): 2.5
• Configuration: Single P
• Package: SO-8

AP9569GM
0.01
100
0.1
16
12
20
15
10
10
5
0
8
4
0
1
0
0.1
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
V
DS
=-5V
V
Single Pulse
-V
5
I
T
-V
DS
Q
D
A
GS
DS
= -4A
= -30V
G
=25
, Total Gate Charge (nC)
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
2
o
C
10
T
j
=25
o
C
15
10
4
T
j
20
=150
100us
1ms
10ms
100ms
1s
DC
o
C
100
25
6
Fig 10. Effective Transient Thermal Impedance
1000
0.01
100
0.1
10
0.00001
1
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
0.01
V
0.02
Duty factor=0.5
0.05
0.1
0.2
G
5
Single Pulse
0.0001
-V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
R
thja
21
=125
j
= P
t
o
C/W
0.1
DM
f=1.0MH
T
x R
25
thjc
C
+ T
C
C
Q
oss
C
iss
rss
29
1
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