IXFP4N100QM IXYS, IXFP4N100QM Datasheet

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IXFP4N100QM

Manufacturer Part Number
IXFP4N100QM
Description
Q-Class HiPerFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFP4N100QM

Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
2.2
Rds(on), Max, Tj=25°c, (?)
3.0
Ciss, Typ, (pf)
1185
Qg, Typ, (nc)
43.5
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
46
Rthjc, Max, (ºc/w)
2.7
Package Style
TO-220 Overmolded
HiPerFET
Power MOSFET
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting Torque
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 10V, I
TM
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 1mA
≤ V
= 1.5mA
= 2A, Note 1
GS
DS
= 0V
DSS
= 0V
g
, T
, High dv/dt
J
GS
≤ 150°C
= 1MΩ
Advance Technical Information
T
J
= 125°C
JM
IXFP4N100QM
1000
Min.
- 55 ... +150
- 55 ... +150
3.0
Characteristic Values
Maximum Ratings
1.13 / 10
1000
1000
±20
±30
700
150
300
260
Typ.
2.2
2.5
16
46
4
5
Nm/lb.in.
Max.
±100 nA
5.0
3.0 Ω
25 μA
1 mA
V/ns
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
V
I
R
OVERMOLDED
(IXFP...M) OUTLINE
G = Gate
S = Source
Features
Advantages
D25
Plastic Overmolded Tab for Electrical
Isolation
International Standard Package
Avalanche Rated
Fast Intrinsic Diode
Molding Epoxies meet UL 94 V-0
Flammability Classification
High Power Density
Easy to Mount
Space Savings
DS(on)
DSS
G
D S
=
= 1000V
≤ ≤ ≤ ≤ ≤
D = Drain
3.0Ω Ω Ω Ω Ω
2.2A
DS100165(06/09)

Related parts for IXFP4N100QM

IXFP4N100QM Summary of contents

Page 1

... GSS DSS DS DSS 10V 2A, Note 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFP4N100QM Maximum Ratings 1000 = 1MΩ 1000 GS ±20 ±30 2 700 ≤ 150° ... +150 150 - 55 ... +150 300 260 1 ...

Page 2

... 6.2 DSS D 23.0 Characteristic Values Min. Typ. JM 480 6.16 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFP4N100QM OVERMOLDED TO-220 (IXFP...M) Max 2.7 °C/W Terminals Gate 2 - Drain (Collector Source (Emitter) Max 1.5 V ...

Page 3

... V = 10V GS 7V 2.6 6V 2.2 5V 1.8 1.4 1.0 0 Value D 2 10V GS 2.0 1.6 1.2 0.8 0.4 0 IXFP4N100QM Fig. 2. Extended Output Characteristics @ 25º Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V GS I -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions 125ºC J 25ºC - 40ºC 5.0 5.5 6.0 6 25ºC J 0.7 0.8 0.9 1.0 10.00 C iss 1.00 C oss 0.10 C rss 0. IXFP4N100QM Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 500V DS I ...

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