IXFP4N100QM IXYS, IXFP4N100QM Datasheet - Page 4

• Manufacturer Part Number: IXFP4N100QM
• Description: Q-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFP4N100QM

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 2.2
• Rds(on), Max, Tj=25°c, (?): 3.0
• Ciss, Typ, (pf): 1185
• Qg, Typ, (nc): 43.5
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 46
• Rthjc, Max, (ºc/w): 2.7
• Package Style: TO-220 Overmolded

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
12
10
10
8
7
6
5
4
3
2
1
0
8
6
4
2
0
3.0
0.3
0
f
= 1 MHz
5
3.5
0.4
Fig. 9. Forward Voltage Drop of
10
4.0
0.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
J
15
= 125ºC
Intrinsic Diode
V
V
V
4.5
0.6
GS
SD
DS
- Volts
- Volts
- Volts
20
T
J
= 125ºC
0.7
5.0
- 40ºC
25ºC
25
C oss
C iss
C rss
0.8
5.5
T
30
J
= 25ºC
6.0
0.9
35
1.0
40
6.5
10.00
1.00
0.10
0.01
9
8
7
6
5
4
3
2
1
0
10
0.0001
8
6
4
2
0
0
0
V
I
I
D
G
Fig. 12. Maximum Transient Thermal Impedance
DS
= 2A
= 10mA
1
5
= 500V
0.001
10
2
Fig. 8. Transconductance
0.01
15
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
G
3
I
- NanoCoulombs
D
- Amperes
20
IXFP4N100QM
0.1
4
25
T
J
= - 40ºC
125ºC
5
25ºC
30
1
6
35
IXYS REF: T_4N100Q(4U)6-25-09
10
40
7
100
45
8