IXFP4N100QM IXYS, IXFP4N100QM Datasheet - Page 2

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IXFP4N100QM

Manufacturer Part Number
IXFP4N100QM
Description
Q-Class HiPerFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFP4N100QM

Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
2.2
Rds(on), Max, Tj=25°c, (?)
3.0
Ciss, Typ, (pf)
1185
Qg, Typ, (nc)
43.5
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
46
Rthjc, Max, (ºc/w)
2.7
Package Style
TO-220 Overmolded
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2 %.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
Resistive Switching Times
V
R
I
V
Test Conditions
V
V
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
F
F
GS
R
G
DS
GS
GS
GS
= 4A, -di/dt = 100A/μs,
= I
= 100V, V
= 4.7Ω (External)
= 10V, V
= 20V, I
= 10V, V
= 0V, V
= 0V
S
, V
ADVANCE TECHNICAL INFORMATION
GS
= 0V, Note 1
D
DS
DS
DS
GS
= 2A, Note 1
= 25V, f = 1MHz
= 0.5
= 0.5 V
= 0V
4,835,592
4,881,106
V
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 2A,
= 2A
5,049,961
5,063,307
5,187,117
JM
Min.
5,237,481
5,381,025
5,486,715
2.5
Characteristic Values
Min.
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
1185
43.5
23.0
6.16
Typ.
480
130
4.3
6.2
15
32
65
17
18
Max.
2.7 °C/W
Max.
250
6,404,065 B1
6,534,343
6,583,505
1.5
16
4
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
OVERMOLDED TO-220 (IXFP...M)
6,727,585
6,771,478 B2 7,071,537
IXFP4N100QM
Terminals: 1 - Gate
1 2
7,005,734 B2
7,063,975 B2
3
2 - Drain (Collector)
3 - Source (Emitter)
7,157,338B2

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