IXTQ60N10T IXYS, IXTQ60N10T Datasheet - Page 3

• Manufacturer Part Number: IXTQ60N10T
• Description: Trench MOSFETs
• Manufacturer: IXYS

Specifications of IXTQ60N10T

• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.018
• Ciss, Typ, (pf): 2650
• Qg, Typ, (nc): 49
• Trr, Typ, (ns): 59
• Trr, Max, (ns): -
• Pd, (w): 176
• Rthjc, Max, (k/w): 0.85
• Package Style: TO-3P

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3.2
2.8
2.4
2.0
1.6
1.2
0.8
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0
0
0
0.1
0.2
V
15
Fig. 5. R
GS
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
= 10V
0.2
0.4
15V
30
- - - -
0.6
0.3
DS(on)
45
0.4
0.8
Normalized to I
Drain Current
I
60
D
0.5
1
- Amperes
V
V
DS
DS
V
1.2
0.6
- Volts
- Volts
75
GS
V
GS
= 10V
9V
8V
1.4
0.7
= 10V
90
9V
8V
D
= 30A Value vs.
1.6
0.8
T
J
105
= 175ºC
7V
6V
7V
6V
5V
J
T
J
1.8
0.9
= 150ºC
J
= 25ºC
= 25ºC
120
2
1
135
2.2
1.1
2.4
150
1.2
200
180
160
140
120
100
2.8
2.4
2.0
1.6
1.2
0.8
0.4
80
60
40
20
70
60
50
40
30
20
10
0
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GS
-25
-25
Fig. 4. R
= 10V
Fig. 6. Drain Current vs. Case Temperature
5
0
0
DS(on)
T
Junction Temperature
C
10
25
25
- Degrees Centigrade
Normalized to I
T
J
- Degrees Centigrade
50
50
V
DS
15
- Volts
V
GS
IXTQ60N10T
75
75
= 10V
I
D
9V
D
= 60A
= 30A Value vs.
100
100
20
8V
125
125
I
D
= 30A
J
25
7V
= 25ºC
150
150
6V
175
175
30