IXTQ60N10T IXYS, IXTQ60N10T Datasheet - Page 5

• Manufacturer Part Number: IXTQ60N10T
• Description: Trench MOSFETs
• Manufacturer: IXYS

Specifications of IXTQ60N10T

• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.018
• Ciss, Typ, (pf): 2650
• Qg, Typ, (nc): 49
• Trr, Typ, (ns): 59
• Trr, Max, (ns): -
• Pd, (w): 176
• Rthjc, Max, (k/w): 0.85
• Package Style: TO-3P

© 2010 IXYS CORPORATION, All Rights Reserved
170
150
130
110
40
39
38
37
36
35
34
33
32
60
55
50
45
40
35
30
25
90
70
50
30
10
25
15
t
T
V
r
J
DS
Fig. 15. Resistive Turn-on Switching Times vs.
Fig. 17. Resistive Turn-off Switching Times vs.
= 125ºC, V
12
= 50V
35
20
10A < I
Fig. 13. Resistive Turn-on Rise Time vs.
14
45
GS
t
d(on)
25
I
= 10V
D
D
16
< 30A
= 10A
- - - -
55
Junction Temperature
I
Gate Resistance
T
30
D
T
J
Drain Current
18
J
= 30A
- Degrees Centigrade
I
= 125ºC
D
65
R
- Amperes
G
20
35
- Ohms
75
22
I
D
I
40
t
R
V
D
= 30A
85
f
DS
G
T
= 10A
J
= 15Ω, V
= 50V
= 25ºC
24
R
V
45
DS
95
G
= 15Ω, V
= 50V
26
GS
t
d(off)
= 10V
105
50
- - - -
GS
28
= 10V
115
30
55
80
70
60
50
40
30
20
10
67
63
59
55
51
47
43
39
35
125
120
110
100
39
38
37
36
35
34
33
90
80
70
60
50
40
30
60
55
50
45
40
35
30
25
25
15
10
t
R
V
t
T
V
f
DS
G
Fig. 18. Resistive Turn-off Switching Times vs.
J
R
V
f
DS
Fig. 16. Resistive Turn-off Switching Times vs.
= 125ºC, V
G
DS
= 15Ω, V
35
= 50V
= 50V
= 15Ω, V
12
20
= 50V
Fig. 14. Resistive Turn-on Rise Time vs.
45
GS
t
14
GS
d(off)
GS
t
25
= 10V
d(off)
= 10V
= 10V
55
- - - -
Junction Temperature
- - - -
16
T
Gate Resistance
30
J
65
- Degrees Centigrade
18
Drain Current
R
G
I
D
35
75
- Ohms
- Amperes
20
85
40
IXTQ60N10T
T
T
22
J
J
I
= 25ºC
= 125ºC
I
D
95
D
I
= 10A, 30A
D
= 10A
45
= 30A
24
105
50
26
IXYS REF: T_60N10T(2V)8-07-08-A
115
28
55
125
185
170
155
140
125
110
95
80
65
50
64
60
56
52
48
44
40
30