IXTQ60N10T IXYS, IXTQ60N10T Datasheet - Page 4

• Manufacturer Part Number: IXTQ60N10T
• Description: Trench MOSFETs
• Manufacturer: IXYS

Specifications of IXTQ60N10T

• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.018
• Ciss, Typ, (pf): 2650
• Qg, Typ, (nc): 49
• Trr, Typ, (ns): 59
• Trr, Max, (ns): -
• Pd, (w): 176
• Rthjc, Max, (k/w): 0.85
• Package Style: TO-3P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
180
160
140
120
100
100
90
80
70
60
50
40
30
20
10
80
60
40
20
10
0
0
4.0
0.4
0
0.5
f
Fig. 9. Forward Voltage Drop of Intrinsic Diode
= 1 MHz
4.5
5
0.6
10
5.0
0.7
T
Fig. 7. Input Admittance
J
Fig. 11. Capacitance
= 150ºC
T
15
J
0.8
V
V
= 150ºC
5.5
GS
SD
- 40ºC
V
25ºC
- Volts
- Volts
DS
0.9
20
- Volts
6.0
1.0
T
25
J
= 25ºC
C iss
C oss
C rss
1.1
6.5
30
1.2
7.0
35
1.3
1.4
7.5
40
0.01
70
60
50
40
30
20
10
0.1
10
0.00001
0
9
8
7
6
5
4
3
2
1
0
1
0
0
Fig. 12. Maximum Transient Thermal Impedance
V
I
I
D
G
10
5
DS
= 10A
= 10mA
0.0001
= 50V
10
20
Fig. 8. Transconductance
15
0.001
30
Q
Fig. 10. Gate Charge
Pulse Width - Seconds
G
- NanoCoulombs
I
D
20
- Amperes
40
0.01
25
IXTQ60N10T
50
30
0.1
60
35
T
J
= - 40ºC
70
40
150ºC
1
25ºC
80
45
10
90
50