MMIX1F420N10T IXYS, MMIX1F420N10T Datasheet

no-image

MMIX1F420N10T

Manufacturer Part Number
MMIX1F420N10T
Description
Trench HiperFETs
Manufacturer
IXYS
Datasheet

Specifications of MMIX1F420N10T

Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
334
Rds(on), Max, Tj=25°c, (?)
0.0026
Ciss, Typ, (pf)
47000
Qg, Typ, (nc)
670
Trr, Typ, (ns)
-
Trr, Max, (ns)
140
Pd, (w)
680
Rthjc, Max, (k/w)
0.22
GigaMOS
HiperFET
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
P
dv/dt
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2012 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
TM
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
≤ I
= 0V, I
= V
= ±20V, V
= V
= 10V, I
DM
Trench
GS
, V
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 60A, Note 1
GS
DS
= 0V
DSS
= 0V
TM
, T
J
GS
≤ 175°C
= 1MΩ
Advance Technical Information
T
J
= 150°C
MMIX1F420N10T
JM
50..200 / 11..45
100
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1000
2500
334
100
100
±20
±30
200
680
175
300
260
Typ.
20
8
5
±200 nA
Max.
5.0
2.6 mΩ
50
5 mA
N/lb.
V/ns
V~
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
T
G = Gate
S = Source
Features
Advantages
Applications
D25
-
-
-
G
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Substrate
175°C Operating Temperature
Very High Current Handling
Fast Intrinsic Diode
Avalanche Rated
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High Speed Power Switching
Applications
Capability
rr
Very Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
Excellent Thermal Transfer
Increased Temperature and Power
Cycling Capability
High Isolation Voltage
S
Isolated Tab
S
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
G
DS(on)
D = Drain
100V
334A
2.6mΩ Ω Ω Ω Ω
140ns
DS100410(01/12)
(2500V~)
D
D

Related parts for MMIX1F420N10T

MMIX1F420N10T Summary of contents

Page 1

... GSS DSS DS DSS 10V 60A, Note 1 DS(on © 2012 IXYS CORPORATION, All Rights Reserved Advance Technical Information MMIX1F420N10T Maximum Ratings 100 = 1MΩ 100 GS ±20 ±30 334 1000 JM 200 5 680 ≤ 175° -55 ... +175 175 -55 ... +175 300 ...

Page 2

... I = 210A 170 DSS D 195 0.05 Characteristic Values Min. Typ 380 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 MMIX1F420N10T Max Ω 0.22 °C/W °C/W Max. 420 A 1680 A 1.2 V 140 6,404,065 B1 ...

Page 3

... Drain Current 350 300 250 T = 175ºC J 200 150 100 T = 25ºC J 200 250 300 350 MMIX1F420N10T Fig. 2. Extended Output Characteristics @ 15V GS 10V 0 Volts DS Fig. 4. Normalized R vs. Junction Temperature DS(on 10V GS I < 420A D -50 ...

Page 4

... T = 25º 0.7 0.8 0.9 1.0 1.1 10,000 C iss 1,000 100 C oss rss MMIX1F420N10T Fig. 8. Transconductance 100 I - Amperes D Fig. 10. Gate Charge V = 50V 210A 10mA G 0 100 200 300 400 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area ...

Page 5

... GS 220 600 180 500 400 140 300 100 200 100 60 140 160 180 200 MMIX1F420N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω 10V 50V 125º 25º 100 120 ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance Fig. 19. Maximium Transient Thermal Impedance .sadgsfgsf 0.001 0.01 Pulse Width - Seconds MMIX1F420N10T 0 100 IXYS REF: MMIX1F420N10T (9V)12-15-11 ...

Page 7

... Package Outline © 2012 IXYS CORPORATION, All Rights Reserved MMIX1F420N10T PIN Gate 5-12 = Source 13-24 = Drain ...

Related keywords