MMIX1F420N10T IXYS, MMIX1F420N10T Datasheet - Page 4

• Manufacturer Part Number: MMIX1F420N10T
• Description: Trench HiperFETs
• Manufacturer: IXYS

Specifications of MMIX1F420N10T

• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 334
• Rds(on), Max, Tj=25°c, (?): 0.0026
• Ciss, Typ, (pf): 47000
• Qg, Typ, (nc): 670
• Trr, Typ, (ns): -
• Trr, Max, (ns): 140
• Pd, (w): 680
• Rthjc, Max, (k/w): 0.22

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100.0
10.0
180
160
140
120
100
350
300
250
200
150
100
1.0
0.1
80
60
40
20
50
0
0
0.2
3.0
0
f
= 1 MHz
0.3
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
3.5
0.4
10
Fig. 7. Input Admittance
0.5
T
Fig. 11. Capacitance
J
15
= 150ºC
T
4.0
J
= 150ºC
V
0.6
V
V
SD
GS
DS
- Volts
- Volts
20
- Volts
0.7
25ºC
4.5
25
0.8
C iss
C oss
C rss
T
- 40ºC
J
30
= 25ºC
0.9
5.0
35
1.0
1.1
5.5
40
10,000
1,000
350
300
250
200
150
100
100
50
10
10
9
8
7
6
5
4
3
2
1
0
0
1
0
0
0
1
V
I
I
T
T
Single Pulse
D
G
DS
R
J
C
= 210A
= 10mA
DS(on)
= 175ºC
20
= 25ºC
= 50V
Fig. 12. Forward-Bias Safe Operating Area
100
Limit
40
200
Fig. 8. Transconductance
60
Fig. 10. Gate Charge
Q
MMIX1F420N10T
G
V
300
I
- NanoCoulombs
D
DS
80
- Amperes
10
- Volts
100
400
T
J
120
= - 40ºC
25ºC
150ºC
500
140
600
160
DC
100
25µs
100µs
1ms
10ms
100ms
700
180