MMIX1F420N10T IXYS, MMIX1F420N10T Datasheet - Page 5

• Manufacturer Part Number: MMIX1F420N10T
• Description: Trench HiperFETs
• Manufacturer: IXYS

Specifications of MMIX1F420N10T

• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 334
• Rds(on), Max, Tj=25°c, (?): 0.0026
• Ciss, Typ, (pf): 47000
• Qg, Typ, (nc): 670
• Trr, Typ, (ns): -
• Trr, Max, (ns): 140
• Pd, (w): 680
• Rthjc, Max, (k/w): 0.22

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340
300
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140
100
700
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100
500
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100
0
25
40
1
t
T
V
R
V
r
J
DS
DS
35
= 125ºC, V
Fig. 17. Resistive Turn-off Switching Times
G
Fig. 15. Resistive Turn-on Switching Times
2
60
= 50V
= 1Ω , V
= 50V
45
Fig. 13. Resistive Turn-on Rise Time
3
GS
80
T
t
GS
d(on)
J
= 10V
= 125ºC
= 10V
vs. Junction Temperature
55
vs. Gate Resistance
- - - -
4
vs. Drain Current
T
100
T
J
J
- Degrees Centigrade
= 25ºC
I
D
65
R
5
- Amperes
G
R
V
t
f
G
DS
- Ohms
120
I
I
= 1Ω, V
D
D
= 50V
I
75
= 200A
= 100A
D
6
= 200A
GS
140
85
= 10V
t
d(off)
7
I
D
- - - -
= 100A
160
95
8
105
180
9
115
200
10
240
200
160
120
80
40
0
260
220
180
140
100
60
125
320
280
240
200
160
120
800
700
600
500
400
300
200
100
700
600
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300
200
100
80
40
0
0
40
25
1
t
R
V
t
T
V
R
V
f
G
DS
f
J
DS
Fig. 16. Resistive Turn-off Switching Times
35
G
DS
T
Fig. 18. Resistive Turn-off Switching Times
= 125ºC, V
2
= 1Ω, V
J
= 1Ω , V
60
= 50V
= 50V
= 50V
= 125ºC
T
I
J
D
45
= 25ºC
Fig. 14. Resistive Turn-on Rise Time
GS
= 200A
3
GS
GS
80
vs. Junction Temperature
= 10V
t
t
d(off)
= 10V
d(off)
55
= 10V
vs. Gate Resistance
4
T
- - - -
- - - -
J
- Degrees Centigrade
100
vs. Drain Current
65
R
MMIX1F420N10T
I
5
G
D
I
D
= 200A
- Ohms
- Amperes
75
120
6
I
D
85
= 100A
140
7
95
I
D
= 100A
8
105
160
115
9
180
125
10
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200
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220
200
180
160
140
120
100
80
200