IXFN64N50PD3 IXYS, IXFN64N50PD3 Datasheet

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IXFN64N50PD3

Manufacturer Part Number
IXFN64N50PD3
Description
Boost and Buck MOSFET Modules
Manufacturer
IXYS
Datasheet

Specifications of IXFN64N50PD3

Vdss, Max, (v)
500
Id25, Tc = 25°c, (a)
50
Id90, Tc = 90°c, (a)
-
Rds(on), Max, Tj = 25°c, (mohms)
0.085
Tf, Typ, (ns)
22
Tr, Typ, (ns)
25
Rthjc, Max, (ºc/w)
0.2
Package Style
SOT-227B
PolarHV
Power MOSFET
Boost & Buck Configurations
(Ultra-fast FRED Diode)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
DM
A
GSS
DSS
© 2009 IXYS CORPORATION, All Rights Reserved
J
JM
stg
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
Mounting Torque
Terminal Connection Torque
V
V
V
V
V
S
TM
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ± 30V, V
= V
= 10V, I
HiPerFET
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 500μA
≤ V
= 8mA
= 32A, Note 1
GS
DS
= 0V
DSS
= 0V
, T
J
GS
≤150°C
= 1MΩ
T
2
J
= 125°C
D2
IXFN64N50PD2
IXFN64N50PD3
JM
3
1
Min.
500
-55 ... +150
-55 ... +150
3.0
Characteristic Values
Maximum Ratings
4
1.3/11.5
1.5/13
± 30
± 40
500
500
200
625
150
2.5
Typ.
50
64
10
2
30
D3
± 200 nA
Nm/lb.in.
Nm/lb.in.
Max.
5.5
50 μA
85 mΩ
3
1
1 mA
V/ns
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
4
Features
Advantages
Applications
V
I
R
t
miniBLOC, SOT-227 B
D2 Pin Out:
1 = Source
2 = Gate
D3 Pin Out:
1 = Source / Diode Cathode 2 = Gate
3 = Drain
D25
Isolation
rr
Fast Intrinsic Diode in Boost
International Standard Package
Encapsulating Epoxy Meets
UL 94 V-0, Flammability Classification
miniBLOC with Aluminium Nitride
Avalanche Rated
Low Package Inductance
PFC Circuits
Uninterruptible Power Supplies (UPS)
Switched-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
High Speed Power Switching
Applications
Robotics and Servo Controls
Configuration
Easy To Mount
Space Savings
Tightly Coupled FRED Diode
High Power Density
DS(on)
DSS
E153432
2
= 500V
= 50A
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
85mΩ Ω Ω Ω Ω
200ns
1
3 = Drain / Diode anode
4 = Diode cathode
4 = Diode cathode
3
DS99507F(4/09)
4

Related parts for IXFN64N50PD3

IXFN64N50PD3 Summary of contents

Page 1

... GSS DSS DS DSS 10V 32A, Note 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved IXFN64N50PD2 IXFN64N50PD3 Maximum Ratings 500 = 1MΩ 500 GS ± 30 ± 200 JM 64 2.5 ≤150° 625 -55 ... +150 150 -55 ...

Page 2

... Min. Typ. 2 150°C 1 100°C 5.5 VJ 200 0.25 . 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN64N50PD2 IXFN64N50PD3 Max. SOT-227B (IXFN) Outline (M4 screws (4x) supplied) nC 0.20 °C/W °C/W Max 250 A 1.5 V 200 ns μC A Max ...

Page 3

... Value 125º 25ºC J 100 120 140 160 IXFN64N50PD2 IXFN64N50PD3 Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V -50 - ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 25ºC - 40ºC 5.0 5.5 6.0 6 25ºC J 1.0 1.1 1.2 1.3 1.4 1.5 1.000 C iss 0.100 0.010 IXFN64N50PD2 IXFN64N50PD3 Fig. 8. Transconductance 40º 25º 125º Amperes D Fig. 10. Gate Charge ...

Page 5

... I = 60A 30A F I =15A 160 F 140 120 160 0 200 400 600 -di /dt F Fig. 17. Recovery time t versus -di rr 0.01 0.1 t IXFN64N50PD2 IXFN64N50PD3 100° 600V 60A 30A F I =15A A/μs 1000 0 200 400 /dt Fig ...

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