IXFN64N50PD3 IXYS, IXFN64N50PD3 Datasheet - Page 5

• Manufacturer Part Number: IXFN64N50PD3
• Description: Boost and Buck MOSFET Modules
• Manufacturer: IXYS

Specifications of IXFN64N50PD3

• Vdss, Max, (v): 500
• Id25, Tc = 25°c, (a): 50
• Id90, Tc = 90°c, (a): -
• Rds(on), Max, Tj = 25°c, (mohms): 0.085
• Tf, Typ, (ns): 22
• Tr, Typ, (ns): 25
• Rthjc, Max, (ºc/w): 0.2
• Package Style: SOT-227B

© 2009 IXYS CORPORATION, All Rights Reserved
Z
Fig. 13. Forward current I
Fig. 16. Dynamic parameters Q
Fig. 19 Transient thermal resistance junction to case
I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
70
60
50
40
30
20
10
A
2
0
1
0
0
T
T
versus T
VJ
VJ
=150°C
=100°C
40
1
I
RM
Q
r
VJ
0.0001
80
2
F
T
VJ
versus V
T
V
120
VJ
F
3
= 25°C
r
, I
C
V
RM
0.001
160
F
4
Figs.13-19 FRED Diode Curves
t
Q
rr
Fig. 14. Reverse recovery charge Q
Fig. 17. Recovery time t
220
200
180
160
140
120
r
μC
ns
5
4
3
2
1
0
100
0.01
0
T
V
VJ
R
versus -di
= 100°C
= 600V
200
I
I
I
F
F
F
= 60A
= 30A
= 15A
400
F
/dt
0.1
-di
I
I
I
600
F
F
F
= 60A
= 30A
=15A
F
-di
rr
T
V
/dt
VJ
R
versus -di
t
F
/dt
= 100°C
= 600V
A/μs
s
800
A/μs
1000
1000
F
1
r
/dt
Constants for Z
I
V
RM
FR
1
2
3
120
Fig. 15. Peak reverse current I
i
Fig. 18. Peak forward voltage V
60
50
40
30
20
10
80
40
A
V
0
0
0
0
T
V
t
VJ
R
fr
I
I
I
= 100°C
versus -di
= 600V
F
F
F
= 60A
= 30A
=15A
200
200
t
R
0.465
0.179
0.256
fr
thi
versus di
thJC
(K/W)
400
400
calculation:
IXFN64N50PD2
IXFN64N50PD3
F
/dt
F
600
600
/dt
di
-di
T
I
F
t
0.0052
0.0003
0.0397
F
V
/dt
i
F
VJ
/dt
FR
(s)
= 100°C
= 30A
A/μs
800
800
A/μs
IXYS REF: F_64N50P(9J)4-27-09
RM
FR
1000
1000
and
μs
1.2
0.8
0.4
0.0
t
fr