IXFN64N50PD3 IXYS, IXFN64N50PD3 Datasheet - Page 4

• Manufacturer Part Number: IXFN64N50PD3
• Description: Boost and Buck MOSFET Modules
• Manufacturer: IXYS

Specifications of IXFN64N50PD3

• Vdss, Max, (v): 500
• Id25, Tc = 25°c, (a): 50
• Id90, Tc = 90°c, (a): -
• Rds(on), Max, Tj = 25°c, (mohms): 0.085
• Tf, Typ, (ns): 22
• Tr, Typ, (ns): 25
• Rthjc, Max, (ºc/w): 0.2
• Package Style: SOT-227B

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
240
220
200
180
160
140
120
100
90
80
70
60
50
40
30
20
10
100
80
60
40
20
0
10
0
3.0
0.3
0
0.4
f
= 1 MHz
3.5
5
0.5
Fig. 9. Forward Voltage Drop of
0.6
10
Fig. 7. Input Admittance
4.0
T
C rss
Fig. 11. Capacitance
J
= 125ºC
0.7
Intrinsic Diode
15
V
V
V
0.8
GS
4.5
SD
DS
C oss
T
- Volts
- Volts
J
- Volts
0.9
= 125ºC
20
T
- 40ºC
J
25ºC
5.0
1.0
= 25ºC
C iss
25
1.1
5.5
1.2
30
1.3
6.0
35
1.4
1.5
6.5
40
1.000
0.100
0.010
90
80
70
60
50
40
30
20
10
10
0.001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
D
G
DS
Fig. 12. Maximum Transient Thermal
= 32A
= 10mA
20
20
= 250V
0.01
Fig. 8. Transconductance
40
40
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
G
I
60
- NanoCoulombs
D
Impedance
- Amperes
60
0.1
80
T
J
= - 40ºC
80
125ºC
IXFN64N50PD2
IXFN64N50PD3
25ºC
100
100
120
1
IXYS REF: F_64N50P(9J)4-27-09
120
140
140
160
10