IXGR64N60A3 IXYS, IXGR64N60A3 Datasheet

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IXGR64N60A3

Manufacturer Part Number
IXGR64N60A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet

Specifications of IXGR64N60A3

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
-
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
47
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
222
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.03
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
ISOPLUS247
Ultra-low Vsat PT IGBTs for
up to 5kHz switching
Symbol
V
V
V
V
I
I
SSOA
(RBSOA)
P
T
T
T
F
T
T
V
Weight
Symbol
(T
BV
V
I
I
V
© 2008 IXYS CORPORATION, All rights reserved
GenX3
C110
CM
CES
GES
J
JM
stg
C
L
SOLD
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
CES
= 25°C, unless otherwise specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
V
Clamped inductive load @ V
T
Mounting Force
1.6mm (0.063 in.) from case for 10s
Plastic body for 10s
50/60 Hz, RMS
I
I
I
V
V
V
I
Test Conditions
ISOL
C
C
C
J
J
C
C
C
GE
CE
GE
CE
= 250μA, V
= 250μA, V
= 25°C to 150°C
= 25°C to 150°C, R
= 50A, V
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
600V IGBT
= V
= 0V
= 0V, V
≤ 1mA
CES
GE
VJ
GE
GE
CE
= ± 20V
= 125°C, R
= 15V, Note 1
= V
= 0V
GE
GE
= 1MΩ
G
= 3Ω
Preliminary Technical Information
T
CE
J
= 125°C
≤ ≤ ≤ ≤ ≤ 600V
IXGR64N60A3
20..120/4.5..27
t = 1min 2500
t = 1s
Characteristic Values
Min.
600
-55 ... +150
-55 ... +150
3.0
Maximum Ratings
I
CM
= 100
3000
± 30
± 20
600
600
350
200
150
300
260
Typ.
47
6
± 100
1.35
Max.
5.0
500 μA
50
N/lb.
V~
V~
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
V
g
V
I
V
ISOPLUS247
G = Gate
C = Collector
Features
Advantages
Applications
C110
Silicon chip on Direct-Copper Bond
(DCB) substrate
Isolated mounting surface
2500V electrical isolation
High power density
Low gate drive requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
CES
CE(sat)
G
C
E153432
E
≤ ≤ ≤ ≤ ≤ 1.35V
= 600V
= 47A
TM
(IXGR)
Isolated Tab
E
= Emitter
DS100002(07/08)

Related parts for IXGR64N60A3

IXGR64N60A3 Summary of contents

Page 1

... 0V ± 20V GES 50A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXGR64N60A3 Maximum Ratings 600 = 1MΩ 600 ± 20 ± 350 = 3Ω 100 G CM ≤ ≤ ≤ ≤ ≤ 600V CE 200 -55 ...

Page 2

... V 28 CES 1.42 268 222 3. 2.76 415 362 6.03 0.15 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGR64N60A3 ISOPLUS247 (IXGR) Outline Max 0.62 °C/W °C/W 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 ...

Page 3

... V = 15V GE 13V 1.3 11V 9V 1.2 1.1 7V 1.0 0.9 0.8 5V 0.7 1.0 1.2 1.4 1.6 1.8 180 160 T = 25ºC J 140 120 100 IXGR64N60A3 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig. 6. Input Admittance ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions. 25ºC 125ºC 100 120 140 160 180 110 100 C ies C oes C res Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGR64N60A3 Fig. 8. Gate Charge 300V 50A ...

Page 5

... T = 25ºC 280 J 220 260 200 240 100 IXGR64N60A3 Fig. 13. Inductive Switching Energy Loss vs. Junction Temperature off 3Ω 15V 480V ...

Page 6

... IXGR64N60A3 Fig. 19. Inductive Turn-on Switching Times vs. Junction Temperature d(on) Ω 15V 480V 100A 50A ...

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