IXGR64N60A3 IXYS, IXGR64N60A3 Datasheet - Page 3
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IXGR64N60A3
Manufacturer Part Number
IXGR64N60A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet
1.IXGR64N60A3.pdf
(6 pages)
Specifications of IXGR64N60A3
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
-
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
47
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
222
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.03
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
ISOPLUS247
© 2008 IXYS CORPORATION, All rights reserved
100
100
3.2
2.8
2.4
2.0
1.6
1.2
0.8
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0.0
0.0
5
0.2
0.2
6
Fig. 5. Collector-to-Emitter Voltage
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
7
0.4
0.4
vs. Gate-to-Emitter Voltage
8
I
0.6
0.6
C
= 100A
V
V
V
50A
25A
9
CE
CE
GE
@ 125ºC
0.8
0.8
@ 25ºC
- Volts
- Volts
- Volts
10
1.0
1.0
V
11
GE
V
GE
1.2
= 15V
1.2
13V
11V
= 15V
12
13V
11V
T
1.4
1.4
J
13
= 25ºC
9V
7V
1.6
1.6
14
9V
7V
5V
1.8
1.8
15
280
240
200
160
120
180
160
140
120
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
80
40
80
60
40
20
0
0
4.0
-50
0
V
GE
V
Fig. 2. Extended Output Characteristics
4.5
GE
-25
1
= 15V
= 15V
Fig. 4. Dependence of V
13V
11V
5.0
Fig. 6. Input Admittance
2
0
Junction Temperature
T
7V
J
9V
T
5.5
J
= 125ºC
- Degrees Centigrade
- 40ºC
25
3
25ºC
V
V
GE
CE
6.0
@ 25ºC
IXGR64N60A3
- Volts
- Volts
50
4
6.5
75
5
7.0
I
I
I
CE(sat)
C
C
C
= 100A
= 50A
= 25A
100
6
7.5
on
125
8.0
7
150
8.5
8