IXGR64N60A3 IXYS, IXGR64N60A3 Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
IXGR64N60A3
Manufacturer Part Number
IXGR64N60A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet
1.IXGR64N60A3.pdf
(6 pages)
Specifications of IXGR64N60A3
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
-
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
47
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
222
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.03
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
ISOPLUS247
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
1.00
0.10
0.01
110
100
100
90
80
70
60
50
40
30
20
10
10
0.0001
0
0
0
f
= 1 MHz
20
5
40
Fig. 7. Transconductance
10
Fig. 9. Capacitance
60
15
I
T
C
J
- Amperes
0.001
V
= - 40ºC
80
CE
20
- Volts
C oes
C res
C ies
100
25ºC
25
Fig. 11. Maximum Transient Thermal Impedance
125ºC
120
30
140
160
35
0.01
Pulse Width - Seconds
180
40
110
100
90
80
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
100
0
Fig. 10. Reverse-Bias Safe Operating Area
0.1
T
R
dV / dt < 10V / ns
150
V
I
I
J
G
C
G
CE
20
= 125ºC
= 3Ω
= 50A
= 10 mA
= 300V
200
40
250
Fig. 8. Gate Charge
60
Q
300
G
V
- NanoCoulombs
CE
350
80
- Volts
IXGR64N60A3
1
400
100
450
120
500
140
550
160
600
10
650
180