HCPL316J500E AVAGO TECH, HCPL316J500E Datasheet - Page 29

• Manufacturer Part Number: HCPL316J500E
• Manufacturer: AVAGO TECH

HCPL-316J
Higher Output Current Using an External Current Buffer:
To increase the IGBT gate drive current, a non-invert-
ing current buffer (such as the npn/pnp buffer shown
in Figure 75) may be used. Inverting types are not com-
patible with the desatura-tion fault protection circuitry
and should be avoided. To preserve the slow IGBT turn-
off feature during a fault condition, a 10 nF capacitor
should be connected from the buffer input to V
a 10 W resistor inserted between the output and the
common npn/pnp base. The MJD44H11/MJD45H11
pair is appropriate for currents up to 8A maximum. The
D44VH10/ D45VH10 pair is appropriate for currents up
to 15 A maximum.
Figure 75. Current buffer for increased drive current.
Part Number
MUR1100E
MURS160T3
UF4007
BYM26E
BYV26E
BYV99
Power/Layout Considerations
Operating Within the Maximum Allowable Power Ratings (Adjust-
ing Value of R
When choosing the value of R
firm that the power dissipation of the HCPL-316J is
within the maximum allowable power rating.
The steps for doing this are:
1. Calculate the minimum desired R
29
V
DESAT
LED2+
V
V
OUT
V
V
CC2
V
V
EE
EE
E
C
G
):
16
15
14
13
12
11
10
9
10 Ω
10 nF
100 pF
Manufacturer
Motorola
Motorola
General Semi.
Philips
Philips
Philips
15 V
G
-5 V
, it is important to con-
MJD44H11 or
MJD45H11 or
G
4.5 Ω
2.5 Ω
;
D44VH10
D45VH10
t
75
75
75
75
75
75
rr
(ns)
EE
and
Max. Reverse Voltage
Rating, V
1000
600
1000
1000
1000
600
2. Calculate total power dissipation in the part referring
3. Compare the input and output power dissipation
DESAT Diode and DESAT Threshold
The DESAT diode’s function is to conduct forward cur-
rent, allowing sensing of the IGBT’s saturated collector-
to-emitter voltage, V
block high voltages (when the IGBT is “off”). During the
short period of time when the IGBT is switching, there is
commonly a very high dV
the IGBT’s collector-to-emitter. This results in I
C
the blanking capacitor, C
charging current and avoid false DESAT triggering, it
is best to use fast response diodes. Listed in the below
table are fast-recovery diodes that are suitable for use
as a DESAT diode (D
cation circuit shown in Figure 62, the voltage on pin 14
(DESAT) is V
voltage of D
ter voltage). The value of V
signal a FAULT condition, is nominally 7V – V
this DESAT threshold voltage can be decreased by using
multiple DESAT diodes in series. If n is the number of DE-
SAT diodes then the nominal threshold value becomes
V
instead of one, diodes with half of the total required
maximum reverse-voltage rating may be chosen.
CE,FAULT(TH)
D-DESAT
to Figure 77. (Average switching energy supplied to
HCPL‑316J per cycle vs. R
calculated in step #2 to the maximum recommended
dissipation for the HCPL-316J. (If the maximum rec-
ommended level has been exceeded, it may be nec-
essary to raise the value of R
power and repeat step #2.)
RRM
(Volts)
x dV
DESAT
DESAT
= 7 V – n x V
CE
/dt) charging current which will charge
= V
and V
CESAT
F
DESAT
+ V
F
CE
59-04 (axial leaded)
Case 403A (surface mount)
DO-204AL (axial leaded)
SOD64 (axial leaded)
SOD57 (axial leaded)
SOD87 (surface mount)
. In the case of using two diodes
BLANK
CE
, (when the IGBT is “on”) and to
CE
). In the recommended appli-
G
is the IGBT collector-to-emit-
, (where V
/dt voltage ramp rate across
CE
plot);
Package Type
. In order to minimize this
which triggers DESAT to
G
to lower the switching
F
is the forward ON
F
. If desired,
CHARGE
(=