SGH40N60UF Fairchild Semiconductor, SGH40N60UF Datasheet - Page 3

• Manufacturer Part Number: SGH40N60UF
• Description: Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Fig 3. Saturation Voltage vs. Case
Fig 5. Saturation Voltage vs. V
Fig 1. Typical Output Characteristics
160
120
80
40
20
16
12
8
4
0
0
4
3
2
1
0
0
0
0
Common Emitter
T
Common Emitter
V
Temperature at Variant Current Level
C
GE
= 25℃
= 15V
30
Collector - Emitter Voltage, V
4
I
C
Gate - Emitter Voltage, V
2
= 10A
Case Temperature, T
60
20A
8
40A
4
90
12
20V
C
[ ℃ ]
GE
GE
Common Emitter
T
C
CE
[V]
= 25℃
6
[V]
120
16
V
I
C
15V
GE
40A
20A
= 10A
= 10V
12V
150
20
8
Fig 2. Typical Saturation Voltage
Fig 4. Load Current vs. Frequency
Fig 6. Saturation Voltage vs. V
80
70
60
50
40
30
20
10
30
25
20
15
10
20
16
12
0
8
4
0
5
0
0.5
0.1
0
Duty cycle : 50%
T
Power Dissipation = 32W
Common Emitter
V
T
T
C
GE
C
C
Characteristics
= 100℃
= 25℃
= 125℃
= 15V
Collector - Emitter Voltage, V
I
4
C
1
= 10A
Gate - Emitter Voltage, V
1
Frequency [KHz]
20A
8
V
Load Current : peak of square wave
CC
= 300V
10
40A
12
GE
Common Emitter
T
GE
C
CE
100
= 125℃
[V]
[V]
16
SGH40N60UF Rev. A1
1000
10
20