SGH40N60UF Fairchild Semiconductor, SGH40N60UF Datasheet - Page 4

• Manufacturer Part Number: SGH40N60UF
• Description: Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Fig 9. Turn-Off Characteristics vs.
Fig 7. Capacitance Characteristics
Fig 11. Turn-On Characteristics vs.
1000
100
200
100
2500
2000
1500
1000
20
10
500
0
1
1
Ton
Common Emitter
V
I
T
T
C
Tr
C
C
Gate Resistance
CC
= 20A
10
= 25℃
= 125℃
Collector Current
= 300V, V
Collector - Emitter Voltage, V
15
GE
= ± 15V
Gate Resistance, R
Collector Current, I
Cies
Coes
Cres
20
10
25
Common Emitter
V
R
T
T
CC
G
C
C
= 25℃
= 125℃
= 10
= 300V, V
G
C
10
[ ]
30
Common Emitter
V
T
[A]
GE
C
CE
= 25℃
= 0V, f = 1MHz
[V]
GE
35
= ± 15V
100
Toff
Tf
Tf
200
40
30
Fig 8. Turn-On Characteristics vs.
Fig 10. Switching Loss vs. Gate Resistance
Fig 12. Turn-Off Characteristics vs.
2000
1000
1000
300
100
100
100
10
50
20
1
1
Toff
Toff
Common Emitter
V
I
T
T
Common Emitter
V
I
T
T
C
C
Gate Resistance
Tf
Tf
CC
C
C
Common Emitter
V
R
T
T
CC
C
C
= 20A
= 20A
10
CC
C
C
= 25℃
= 125℃
G
= 25℃
= 125℃
Collector Current
= 300V, V
= 300V, V
= 25℃
= 125℃
= 10
= 300V, V
15
GE
GE
GE
Gate Resistance, R
= ± 15V
Gate Resistance, R
= ± 15V
= ± 15V
Collector Current, I
20
10
10
25
G
G
C
[ ]
[ ]
30
[A]
35
100
100
Tr
Ton
Eoff
SGH40N60UF Rev. A1
Eon
Eon
Eoff
200
200
40