SGH40N60UF Fairchild Semiconductor, SGH40N60UF Datasheet - Page 5

• Manufacturer Part Number: SGH40N60UF
• Description: Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
3000
1000
500
100
100
0.1
10
10
1
0.3
I
I
Eoff
Eoff
Eon
Eon
C
C
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
MAX. (Pulsed)
MAX. (Continuous)
10
C
= 25℃
Collector-Emitter Voltage, V
15
1
1E-3
0.01
Collector Current, I
0.1
1
10
20
DC Operation
-5
0.02
0.05
0.01
0.1
0.2
0.5
single pulse
10
25
Common Emitter
V
R
T
T
C
C
CC
G
= 25℃
= 125℃
= 10
= 300V, V
10
C
1㎳
30
[A]
-4
Fig 17. Transient Thermal Impedance of IGBT
CE
100
100us
[V]
GE
35
50us
= ± 15V
10
1000
Rectangular Pulse Duration [sec]
40
-3
10
-2
Fig 16. Turn-Off SOA Characteristics
Fig 14. Gate Charge Characteristics
500
100
0.1
15
12
10
1
9
6
3
0
1
0
Common Emitter
R
T
C
L
= 15
= 25℃
10
-1
V
Collector-Emitter Voltage, V
CC
300 V
= 100 V
30
Gate Charge, Q
Pdm
10
Duty factor D = t1 / t2
Peak Tj = Pdm
Safe Operating Area
V
GE
10
=20V, T
t1
0
t2
60
200 V
C
=100
Zthjc + T
g
[ nC ]
o
100
C
C
10
CE
1
90
[V]
SGH40N60UF Rev. A1
1000
120