SGS10N60RUFD Fairchild Semiconductor, SGS10N60RUFD Datasheet - Page 2

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SGS10N60RUFD

Manufacturer Part Number
SGS10N60RUFD
Description
Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness
Manufacturer
Fairchild Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SGS10N60RUFD
Manufacturer:
FAIRCHIL
Quantity:
12 500
©2001 Fairchild Semiconductor Corporation
Electrical Characteristics of IGBT
Electrical Characteristics of DIODE
Off Characteristics
BV
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
E
E
E
t
t
t
t
E
E
E
T
Q
Q
Q
Le
V
t
I
Q
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
Symbol
Symbol
sc
B
T
GE(th)
CE(sat)
on
off
ts
on
off
ts
FM
ies
oes
res
g
ge
gc
rr
J
VCES
CES
/
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
Parameter
Parameter
I
di/dt = 200A/ s
I
F
F
= 12A,
T
= 12A
V
V
V
V
V
f = 1MHz
V
R
Inductive Load, T
V
R
Inductive Load, T
V
@
V
V
Measured 5mm from PKG
C
I
I
I
C
C
C
GE
GE
CE
GE
CE
CC
CC
CC
CE
GE
G
G
= 25 C unless otherwise noted
T
T
C
= 10A
= 16A
= 10mA, V
= 20 , V
= 20 , V
C
= 25 C unless otherwise noted
= V
= 30V
= 300 V, I
= 0V, I
= 0V, I
= V
= 300 V, I
= 300 V, I
= 300 V, V
= 15V
Test Conditions
= 100 C
Test Conditions
CES
GES
,
,
,
C
C
, V
, V
V
V
V
GE
GE
= 250uA
= 1mA
GE
CE
GE
GE
C
C
C
GE
CE
GE
= 15V,
= 15V,
= 10A,
= 10A,
= 10A,
= 0V,
= V
= 15V
= 15V
C
C
= 0V
= 0V
= 15V
T
T
T
T
T
T
T
T
= 25 C
= 125 C
C
C
C
C
C
C
C
C
GE
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
Min.
600
5.0
Min.
10
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
660
158
141
215
356
242
161
452
613
115
Typ.
0.6
6.0
2.2
2.5
7.5
220
25
15
30
36
16
33
42
30
1.4
1.3
3.5
5.6
--
--
--
--
42
60
80
5
8
± 100
Max.
Max.
250
200
500
350
860
8.5
2.8
180
50
60
45
10
16
1.7
6.0
60
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
SGS10N60RUFD Rev. A
Units
Units
V/ C
nC
nC
nC
nH
nA
pF
pF
pF
nS
nC
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
A
A
J
J
J
J
J
J
s

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