SGS10N60RUFD Fairchild Semiconductor, SGS10N60RUFD Datasheet - Page 5

• Manufacturer Part Number: SGS10N60RUFD
• Description: Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
1000
0.01
100
100
0.1
10
1
0.1
5
Common Emitter
V
T
T
I
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
C
GE
C
C
MAX. (Continuous)
I
= 25℃ ━━
= 125℃ ------
C
= ± 15V, R
MAX. (Pulsed)
C
= 25℃
Collector-Emitter Voltage, V
Eoff
1
G
0.01
= 20
Collector Current, I
0.1
10
10
Eon
1
10
DC Operation
-5
0.05
0.01
0.02
0.5
0.2
0.1
single pulse
10
C
10
15
[A]
1㎳
-4
Fig 17. Transient Thermal Impedance of IGBT
CE
100
[V]
100us
50us
10
1000
Rectangular Pulse Duration [sec]
-3
20
10
-2
Fig 14. Gate Charge Characteristics
Fig 16. Turn-Off SOA Characteristics
50
15
12
9
6
3
0
0
1
Common Emitter
R
T
C
L
= 30
= 25℃
10
-1
Collector-Emitter Voltage, V
Gate Charge, Q
10
Pdm
Duty factor D = t1 / t2
Peak Tj = Pdm
Safe Operating Area
V
10
GE
V
= 20V, T
10
CC
t1
0
= 100 V
t2
C
= 100℃
Zthjc + T
20
g
[ nC ]
100
C
10
CE
1
200 V
300 V
[V]
30
SGS10N60RUFD Rev. A
1000