SGS10N60RUFD Fairchild Semiconductor, SGS10N60RUFD Datasheet - Page 4

• Manufacturer Part Number: SGS10N60RUFD
• Description: Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Fig 9. Turn-Off Characteristics vs.
Fig 7. Capacitance Characteristics
1000
Fig 11. Turn-On Characteristics vs.
1400
1200
1000
100
100
800
600
400
200
10
0
Common Emitter
V
I
T
T
C
Common Emitter
V
T
T
CC
C
C
Gate Resistance
= 10A
GE
C
C
6
= 25℃ ━━
= 125℃ ------
Collector Current
= 300V, V
= 25℃ ━━
= 125℃ ------
= ± 15V, R
10
1
Collector - Emitter Voltage, V
8
GE
Gate Resistance, R
= ± 15V
G
= 20
Collector Current, I
10
12
14
G
C
10
[ ]
Common Emitter
V
T
100
[A]
C
GE
16
Coes
Cres
CE
= 25℃
Cies
= 0V, f = 1MHz
[V]
18
Toff
Toff
Tf
Tf
Ton
Tr
20
Fig 8. Turn-On Characteristics vs.
Fig 10. Switching Loss vs. Gate Resistance
Fig 12. Turn-Off Characteristics vs.
1000
1000
100
100
100
10
Toff
Tf
Toff
Tf
Common Emitter
V
I
T
T
Common Emitter
V
I
T
T
C
Gate Resistance
C
Common Emitter
V
T
T
CC
C
C
C
C
CC
= 10A
= 10A
C
C
6
GE
= 25℃ ━━
= 125℃ ------
= 25℃ ━━
= 125℃ ------
Collector Current
= 300V, V
= 25℃ ━━
= 125℃ ------
= 300V, V
= ± 15V, R
10
8
10
GE
GE
Gate Resistance, R
Gate Resistance, R
G
= ± 15V
= ± 15V
= 20
Collector Current, I
10
12
14
G
G
C
[ ]
[ ]
[A]
100
16
100
18
SGS10N60RUFD Rev. A
Eoff
Eon
Eoff
Ton
Tr
20