FDMS3686S Fairchild Semiconductor, FDMS3686S Datasheet - Page 4

• Manufacturer Part Number: FDMS3686S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMS3686S Rev.C1
Typical Characteristics (Q1 N-Channel)
40
30
20
10
40
30
20
10
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On Resistance
0
0
0.0
Figure 1.
1.5
-75
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
D
-50
GS
vs Junction Temperature
= 13 A
= 5 V
= 10 V
2.0
0.2
V
V
T
DS
GS
-25
J
On Region Characteristics
,
,
, GATE TO SOURCE VOLTAGE (V)
V
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
GS
V
V
GS
= 4 V
GS
T
0
J
V
2.5
= 3.5 V
0.4
= 4.5 V
= 25
GS
T
J
25
V
= 150
μ
= 6 V
s
o
GS
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 10 V
o
50
C
3.0
0.6
75
T
J
o
100 125 150
3.5
0.8
= -55
C )
o
C
μ
s
4.0
1.0
T
J
4
= 25 °C unless otherwise noted
0.001
0.01
0.1
20
16
12
40
10
Figure 2.
8
4
0
1
4
3
2
1
0
Figure 4.
0.0
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
GS
= 0 V
V
T
= 3.5 V
0.2
SD
J
= 150
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
V
On-Resistance vs Gate to
GS
10
I
Source Voltage
4
D
Source to Drain Diode
,
,
GATE TO SOURCE VOLTAGE (V)
o
DRAIN CURRENT (A)
C
0.4
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
0.6
20
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
T
J
I
D
J
= 125
= 13 A
= 25
0.8
o
T
o
C
C
J
= -55
30
T
8
J
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= 25
V
V
1.0
GS
o
V
V
GS
C
GS
GS
o
= 4.5 V
= 10 V
μ
C
= 4 V
s
= 6 V
μ
s
1.2
10
40