FDMS3686S Fairchild Semiconductor, FDMS3686S Datasheet - Page 8

• Manufacturer Part Number: FDMS3686S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMS3686S Rev.C1
Typical Characteristics (Q2 N-Channel)
0.01
70
10
10
200
100
0.001
0.1
1
8
6
4
2
0
10
Figure 20. Gate Charge Characteristics
1
0.01
0
I
Figure 22. Unclamped Inductive
D
THIS AREA IS
LIMITED BY r DS
SINGLE PULSE
T
R
T
J
A
Figure 24. Forward Bias Safe
= 23 A
θ
JA
= MAX RATED
= 25
= 120
5
0.01
o
V
Switching Capability
C
V
DS
t
AV
0.1
DD
o
, DRAIN to SOURCE VOLTAGE (V)
C/W
Operating Area
, TIME IN AVALANCHE (ms)
Q
= 10 V
T
g
10
(
J
on
, GATE CHARGE (nC)
= 125
)
0.1
V
DD
o
C
15
1
= 20 V
T
J
= 25
1
V
DD
20
o
C
T
J
= 15 V
10
= 100
10
25
o
C
100 us
10s
1 ms
10 ms
100 ms
1s
DC
100200
100
30
T
J
8
= 25
o
C unless otherwise noted
10000
10000
1000
160
120
1000
100
80
40
0.1
100
10
0
Figure 23. Maximun Continuous Drain
10
1
25
10
0.1
Figure 25. Single Pulse Maximum
-4
Figure 21. Capacitance vs Drain
R
Limited by Package
f = 1 MHz
V
θ
Current vs Case Temperature
JC
GS
10
= 2.0
= 0 V
-3
50
V
Power Dissipation
to Source Voltage
o
DS
T
V
C/W
C
GS
, DRAIN TO SOURCE VOLTAGE (V)
10
,
CASE TEMPERATURE (
t, PULSE WIDTH (sec)
-2
= 4.5 V
75
10
1
-1
V
GS
= 10 V
100
1
SINGLE PULSE
R
T
A
θ
JA
= 25
10
o
C )
= 120
125
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o
C
10
o
100
C/W
C
C
C
oss
rss
iss
150
1000
30