FDMS3686S Fairchild Semiconductor, FDMS3686S Datasheet - Page 5

• Manufacturer Part Number: FDMS3686S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMS3686S Rev.C1
Typical Characteristics (Q1 N-Channel)
0.01
70
10
100
0.1
0.001
1
10
10
Figure 7.
0.01
8
6
4
2
0
1
0
Figure 9.
THIS AREA IS
LIMITED BY r DS
I
SINGLE PULSE
T
R
T
D
J
A
Figure 11. Forward Bias Safe
θ
= 13 A
JA
= MAX RATED
= 25
= 125
0.01
Switching Capability
V
o
5
C
0.1
DS
t
Gate Charge Characteristics
AV
o
, DRAIN to SOURCE VOLTAGE (V)
C/W
Operating Area
T
, TIME IN AVALANCHE (ms)
Unclamped Inductive
J
Q
(
= 125
on
g
, GATE CHARGE (nC)
)
0.1
10
o
C
1
T
V
J
DD
= 25
= 10 V
V
1
DD
15
o
C
T
= 20 V
J
= 100
10
V
DD
10
o
C
20
= 15 V
1 ms
100 ms
DC
100us
10 ms
1s
10s
100
100
25
200
T
J
5
= 25 °C unless otherwise noted
2000
1000
1000
100
100
60
50
40
30
20
10
0.1
10
10
0
Figure 10.
25
1
10
0.1
Figure 12. Single Pulse Maximum
Figure 8.
-4
f = 1 MHz
V
Limited by Package
R
GS
Current vs Case Temperature
θ
JC
V
= 0 V
10
GS
= 3.5
-3
V
50
= 4.5 V
T
DS
Power Dissipation
to Source Voltage
A
Maximum Continuous Drain
, DRAIN TO SOURCE VOLTAGE (V)
,
o
AMBIENT TEMPERATURE (
Capacitance vs Drain
C/W
10
t, PULSE WIDTH (sec)
-2
75
1
10
-1
V
GS
100
1
= 10 V
SINGLE PULSE
R
T
A
θ
JA
= 25
10
= 125
o
C )
125
o
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C
10
o
100
C/W
C
C
C
oss
rss
iss
150
1000
30