FDMS8320L Fairchild Semiconductor, FDMS8320L Datasheet - Page 2

• Manufacturer Part Number: FDMS8320L
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

FDMS8320L Rev.C2
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
rr
DS(on)
the user's board design.
FS
GS(th)
SD
iss
oss
rss
g
ΔT
ΔT
g
g
gs
gd
rr
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
J
= 25
°
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
C; N-ch: L = 0.3 mH, I
Parameter
AS
= 42 A, V
a)
DD
2
T
50 °C/W when mounted on a
1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 36 V, V
2
= 25 °C unless otherwise noted
pad of 2 oz copper
GS
= 10 V.
V
I
V
V
V
V
V
V
I
I
V
V
f = 1 MHz
I
I
V
V
V
V
V
D
F
F
D
D
GS
GS
GS
GS
DS
GS
GS
DS
GS
DS
DD
GS
GS
GS
= 32 A, di/dt = 100 A/μs
= 32 A, di/dt = 300 A/μs
= 250 μA, referenced to 25 °C
= 250 μA, V
= 250 μA, referenced to 25 °C
= 5 V, I
= 0 V, I
= 0 V, I
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 20 V, V
= 32 V, V
= ±20 V, V
= 20 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
2
DS
Test Conditions
, I
D
S
S
D
D
D
D
= 2.1 A
= 32 A
= 32 A
D
GS
GS
GEN
= 250 μA
GS
= 32 A
= 32 A, T
= 32 A,
DS
= 27 A
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 32 A
J
= 20 V,
= 125 °C
(Note 2)
(Note 2)
b)
θJC
125 °C/W when mounted on a
minimum pad of 2 oz copper.
is guaranteed by design while R
Min
1.0
40
8350
2840
0.65
0.74
19.2
16.5
104
169
121
Typ
206
1.3
68
59
53
1.7
0.8
1.0
1.2
17
19
68
17
58
21
-6
11110
3780
Max
108
167
θCA
295
170
100
110
117
1.1
1.2
95
3.0
1.1
1.5
1.7
85
30
35
30
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1
is determined by
mV/°C
mV/°C
Units
mΩ
nC
nC
pF
pF
nC
nC
nC
nC
μA
nA
pF
ns
ns
ns
ns
ns
ns
Ω
V
V
V
S