FDMS8320L Fairchild Semiconductor, FDMS8320L Datasheet - Page 3

• Manufacturer Part Number: FDMS8320L
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

FDMS8320L Rev.C2
Typical Characteristics
150
120
150
120
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
90
60
30
90
60
30
Figure 3. Normalized On Resistance
0
0
Figure 1.
1.0
-75
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
= 32 A
-50
= 5 V
vs Junction Temperature
= 10 V
V
0.2
1.5
DS
T
V
V
-25
J
GS
On Region Characteristics
,
GS
,
V
V
DRAIN TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
GS
V
GS
= 3.5 V
GS
T
= 4 V
= 4.5 V
J
= 10 V
0
= 150
0.4
2.0
25
o
μ
C
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
T
0.6
2.5
J
= 25 °C unless otherwise noted
75
T
J
= -55
T
o
100 125 150
J
C )
0.8
3.0
= 25
o
C
V
GS
o
C
= 3 V
μ
s
1.0
3.5
3
0.001
1000
0.01
100
0.1
10
5
4
3
2
1
0
5
4
3
2
1
0
1
Figure 2.
Figure 4.
0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
= 0 V
V
SD
0.2
T
, BODY DIODE FORWARD VOLTAGE (V)
30
J
V
Normalized On-Resistance
= 150
On-Resistance vs Gate to
GS
V
V
I
Source Voltage
GS
GS
D
4
Source to Drain Diode
,
,
I
GATE TO SOURCE VOLTAGE (V)
D
DRAIN CURRENT (A)
= 3 V
= 4 V
0.4
= 32 A
o
C
60
μ
0.6
V
s
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
T
T
= 4.5 V
J
J
= 125
= 25
90
0.8
T
J
o
o
C
= -55
T
C
J
= 25
8
V
120
o
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GS
V
C
1.0
GS
o
= 3.5 V
C
= 10 V
μ
s
1.2
150
10