FDMS8320L Fairchild Semiconductor, FDMS8320L Datasheet - Page 4

• Manufacturer Part Number: FDMS8320L
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

FDMS8320L Rev.C2
Typical Characteristics
0.01
500
100
200
100
0.1
10
10
10
8
6
4
2
0
Figure 7.
1
0.01
1
0.01
0
I
THIS AREA IS
LIMITED BY r
D
Figure 9.
= 32 A
Figure 11. Forward Bias Safe
V
25
0.1
Switching Capability
DS
Gate Charge Characteristics
0.1
SINGLE PULSE
T
R
T
t
J
A
, DRAIN to SOURCE VOLTAGE (V)
AV
θ
V
Operating Area
JA
= MAX RATED
DS(on)
DD
Unclamped Inductive
= 25
Q
, TIME IN AVALANCHE (ms)
= 125
g
= 16 V
, GATE CHARGE (nC)
o
C
50
1
o
T
C/W
J
V
T
= 125
1
DD
J
= 25
= 20 V
o
T
o
75
C
10
T
C
J
J
= 25 °C unless otherwise noted
V
= 100
DD
10
= 24 V
o
C
100
100
100 ms
1 ms
10 ms
1 s
10 s
DC
100200
1000
125
4
30000
10000
1000
1000
240
200
160
120
100
100
0.5
Figure 10.
80
40
10
10
0
1
10
0.1
25
Figure 12.
-3
Figure 8.
Limited by Package
f = 1 MHz
V
Current vs Case Temperature
GS
= 0 V
10
V
50
-2
Power Dissipation
Maximum Continuous Drain
DS
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
Single Pulse Maximum
V
Capacitance vs Drain
C
GS
, CASE
t, PULSE WIDTH (sec)
10
= 4.5 V
-1
1
75
TEMPERATURE
R
θ
1
JC
V
= 1.2
GS
100
= 10 V
o
10
C/W
SINGLE PULSE
R
T
A
θ
(
JA
o
= 25
C
10
= 125
)
www.fairchildsemi.com
125
o
100
C
o
C
C
C/W
C
oss
rss
iss
1000
150
40