FDMS3660S Fairchild Semiconductor, FDMS3660S Datasheet - Page 10

• Manufacturer Part Number: FDMS3660S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS3660S Rev.C1
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS3660S.
35
30
25
20
15
10
-5
5
0
diode reverse recovery characteristic
Figure 27. FDMS3660S SyncFET body
0
100
TIME (ns)
200
didt = 300 A/
(continued)
300
μ
s
400
10
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
Figure 28. SyncFET body diode reverse
leakage versus drain-source voltage
-2
-3
-4
-5
-6
0
5
V
DS
, REVERSE VOLTAGE (V)
T
T
T
J
10
J
J
= 100
= 25
= 125
o
o
C
o
C
C
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20
25