FDMS3660S Fairchild Semiconductor, FDMS3660S Datasheet - Page 5

• Manufacturer Part Number: FDMS3660S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS3660S Rev.C1
Typical Characteristics (Q1 N-Channel)
0.01
100
100
0.1
10
10
10
0.001
Figure 7.
8
6
4
2
0
1
1
0.01
0
I
Figure 9.
D
Figure 11. Forward Bias Safe
= 13 A
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
J
A
θ
JA
= MAX RATED
= 25
= 125
0.01
V
Switching Capability
5
DS
Gate Charge Characteristics
o
0.1
C
t
AV
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
Unclamped Inductive
o
, TIME IN AVALANCHE (ms)
C/W
Q
DS
g
(
, GATE CHARGE (nC)
on
)
0.1
10
T
V
J
1
DD
= 125
V
T
= 10 V
DD
J
= 25
= 20 V
15
o
1
C
V
o
T
C
DD
J
10
= 100
= 15 V
10
20
o
C
1 ms
10 ms
100 ms
1 s
10 s
100
DC
100200
μ
s
100
25
T
J
5
= 25 °C unless otherwise noted
2000
1000
1000
100
80
60
40
20
100
10
0.1
Figure 10.
0
10
25
0.1
1
10
Figure 12. Single Pulse Maximum
Figure 8.
-4
Limited by Package
V
f = 1 MHz
V
Current vs Case Temperature
GS
GS
= 4.5 V
10
= 0 V
-3
V
50
DS
Power Dissipation
to Source Voltage
Maximum Continuous Drain
T
, DRAIN TO SOURCE VOLTAGE (V)
C
Capacitance vs Drain
V
10
t, PULSE WIDTH (sec)
,
GS
CASE TEMPERATURE (
-2
= 10 V
75
1
10
-1
100
1
R
θ
SINGLE PULSE
R
JC
10
o
θ
C )
JA
= 2.9
125
= 125
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10
o
100
C/W
C
C
C
oss
o
iss
rss
C/W
150
1000
30