FDMS3660S Fairchild Semiconductor, FDMS3660S Datasheet - Page 7

• Manufacturer Part Number: FDMS3660S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS3660S Rev.C1
Typical Characteristics (Q2 N-Channel)
120
100
120
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
60
40
20
0
0
Figure 14. On-Region Characteristics
-75
Figure 16. Normalized On-Resistance
0.0
1.0
Figure 18. Transfer Characteristics
I
V
D
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
= 30 A
DS
-50
= 10 V
V
vs Junction Temperature
= 5 V
GS
V
0.2
T
V
V
DS
-25
J
= 2.5 V
GS
GS
,
1.5
,
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
V
DRAIN TO SOURCE VOLTAGE (V)
= 3 V
GS
V
GS
0
V
= 3.5 V
T
GS
= 4.5 V
J
0.4
= 125
= 10 V
25
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
μ
s
2.0
o
C
50
0.6
75
T
J
2.5
T
= -55
o
100 125 150
J
C )
0.8
= 25
o
C
o
μ
C
s
1.0
3.0
T
J
7
= 25
o
C unlenss otherwise noted
Figure 15. Normalized on-Resistance vs Drain
0.001
0.01
100
0.1
10
8
6
4
2
0
4
3
2
1
0
1
Figure 17. On-Resistance vs Gate to
0.0
Forward Voltage vs Source Current
0
2
Figure 19. Source to Drain Diode
V
GS
V
Current and Gate Voltage
= 0 V
GS
V
SD
20
= 2.5 V
0.2
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
T
I
Source Voltage
D
4
J
,
,
= 125
GATE TO SOURCE VOLTAGE (V)
V
DRAIN CURRENT (A)
V
GS
40
GS
= 3.5 V
= 3 V
o
0.4
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
C
T
J
= -55
60
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
T
J
T
I
V
D
J
= 25
J
GS
= 125
o
= 30 A
0.6
= 25
C
= 4.5 V
o
80
C
o
o
C
C
8
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0.8
V
100
μ
GS
s
= 10 V
μ
s
120
1.0
10