FDMS3668S Fairchild Semiconductor, FDMS3668S Datasheet - Page 10

• Manufacturer Part Number: FDMS3668S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS3668S Rev.C1
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS3668S.
20
15
10
diode reverse recovery characteristic
-5
Figure 27. FDMS3668S SyncFET body
5
0
0
40
TIME (ns)
didt = 300 A/
80
(continued)
μ
s
120
160
10
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
-2
-3
-4
-5
-6
Figure 28. SyncFET body diode reverse
leakage versus drain-source voltage
0
5
V
DS
10
, REVERSE VOLTAGE (V)
T
T
T
J
J
J
= 125
= 100
= 25
15
o
o
o
C
C
C
20
25
www.fairchildsemi.com
30