FDMS3668S Fairchild Semiconductor, FDMS3668S Datasheet - Page 7

• Manufacturer Part Number: FDMS3668S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS3668S Rev.C1
Typical Characteristics (Q2 N-Channel)
1.6
1.4
1.2
1.0
0.8
0.6
60
40
20
60
40
20
0
0
0.0
1.0
Figure 14. On-Region Characteristics
-75
Figure 16. Normalized On-Resistance
Figure 18. Transfer Characteristics
I
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
D
V
GS
= 18 A
DS
-50
= 10 V
= 5 V
vs Junction Temperature
V
0.3
V
DS
T
V
GS
-25
J
GS
,
,
1.5
V
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
V
= 3 V
GS
GS
= 3.5 V
0
V
= 4.5 V
GS
T
0.6
J
= 10 V
= 125
25
μ
s
2.0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
C
50
0.9
V
75
GS
T
= 2.5 V
2.5
J
o
100 125 150
= -55
C )
1.2
T
J
= 25
o
C
μ
s
o
C
1.5
3.0
T
J
7
= 25
o
C unlenss otherwise noted
Figure 15. Normalized on-Resistance vs Drain
0.001
0.01
100
0.1
20
15
10
10
4
3
2
1
0
5
0
1
Figure 17. On-Resistance vs Gate to
0.0
0
Forward Voltage vs Source Current
2
Figure 19. Source to Drain Diode
V
GS
Current and Gate Voltage
= 0 V
V
SD
0.2
, BODY DIODE FORWARD VOLTAGE (V)
V
V
GS
I
GS
D
Source Voltage
4
,
,
T
DRAIN CURRENT (A)
GATE TO SOURCE VOLTAGE (V)
= 2.5 V
J
20
= 125
0.4
V
o
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
C
T
J
V
= 4.5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= -55
6
GS
T
T
= 3 V
I
J
D
J
= 125
0.6
= 25
o
= 18 A
T
C
J
40
= 25
o
o
C
C
o
V
V
C
8
GS
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GS
0.8
= 3.5 V
= 10 V
μ
s
μ
s
60
1.0
10