FDMS3668S Fairchild Semiconductor, FDMS3668S Datasheet - Page 8

• Manufacturer Part Number: FDMS3668S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS3668S Rev.C1
Typical Characteristics (Q2 N-Channel)
100
0.01
10
10
0.0001
100
0.1
1
8
6
4
2
0
Figure 20. Gate Charge Characteristics
10
0.01
1
0
I
Figure 22. Unclamped Inductive
D
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
Figure 24. Forward Bias Safe
= 17 A
J
A
θ
JA
0.001
= MAX RATED
= 25
= 120
Switching Capability
V
o
C
DS
t
0.1
AV
o
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
C/W
DS
, TIME IN AVALANCHE (ms)
Q
0.01
g
T
10
(
on
, GATE CHARGE (nC)
J
= 125
)
V
DD
V
DD
= 10 V
T
o
J
0.1
C
1
= 20 V
= 25
o
C
V
T
J
DD
20
= 100
1
= 15 V
10
o
C
10
1 ms
10 ms
100 ms
DC
100
1s
10s
100200
μ
s
100
30
T
J
8
= 25
o
C unless otherwise noted
10000
1000
100
3000
1000
100
80
60
40
20
100
0.5
10
0
10
Figure 23. Maximun Continuous Drain
1
10
25
0.1
Figure 25. Single Pulse Maximum
-4
Figure 21. Capacitance vs Drain
Limited by Package
f = 1 MHz
V
Current vs Case Temperature
V
GS
GS
10
= 0 V
-3
= 4.5 V
V
50
DS
Power Dissipation
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
C
10
t, PULSE WIDTH (sec)
V
,
GS
CASE TEMPERATURE (
-2
= 10 V
75
10
1
-1
1
100
SINGLE PULSE
R
θ
R
JA
10
o
θ
C )
JC
= 120
125
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= 2.8
10
100
o
C
C
C
C/W
rss
o
oss
iss
C/W
1000
150
30