IPP65R190E6 Infineon Technologies, IPP65R190E6 Datasheet - Page 10

• Manufacturer Part Number: IPP65R190E6
• Manufacturer: Infineon Technologies

Specifications of IPP65R190E6

• Packages: PG-TO220-3
• Vds (max): 650.0 V
• Package: TO-220
• Rds(on) @ Tj=25°c Vgs=10: 190.0 mOhm
• Id(max) @ Tc=25°c: 20.2 A
• Idpuls (max): 66.0 A

Final Data Sheet
Table 14
Table 15
Typ. output characteristics T
I
Typ. drain-source on-state resistance
R
D
DS(on)
=f(V
DS
=f(I
); T
D
); T
j
=25 °C; parameter: V
j
=125 °C; parameter: V
j
=25 °C
GS
GS
10
Typ. output characteristics T
I
Drain-source on-state resistance
R
D
DS(on)
=f(V
DS
650V CoolMOS™ E6 Power Transistor
=f(T
); T
j
); I
j
=125 °C; parameter: V
D
=7.3 A; V
Electrical characteristics diagrams
GS
=10 V
j
=125 °C
Rev. 2.0, 2011-05-13
GS
IPx65R190E6