IPP65R190E6 Infineon Technologies, IPP65R190E6 Datasheet - Page 6

• Manufacturer Part Number: IPP65R190E6
• Manufacturer: Infineon Technologies

Specifications of IPP65R190E6

• Packages: PG-TO220-3
• Vds (max): 650.0 V
• Package: TO-220
• Rds(on) @ Tj=25°c Vgs=10: 190.0 mOhm
• Id(max) @ Tc=25°c: 20.2 A
• Idpuls (max): 66.0 A

4
Electrical characteristics, at
Table 6
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Table 7
Parameter
Input capacitance
Output capacitance
Effective output capacitance,
energy related
Effective output capacitance, time
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
1)
2)
Final Data Sheet
C
C
o(er)
o(tr)
2)
is a fixed capacitance that gives the same charging time as
is a fixed capacitance that gives the same stored energy as
Electrical characteristics
Static characteristics
Dynamic characteristics
1)
T
j=25 °C, unless otherwise specified.
Symbol
V
V
I
I
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
G
Symbol
C
C
C
C
t
t
t
t
d(on)
r
d(off)
f
iss
oss
o(er)
o(tr)
Min.
650
2.5
-
-
-
-
-
-
Min.
-
-
-
-
-
-
-
-
6
Typ.
-
3
-
10
-
0.17
0.44
6
Values
Typ.
1620
98
65
308
12
11
112
10
Values
C
C
650V CoolMOS™ E6 Power Transistor
oss
oss
while V
while V
Max.
-
3.5
1
-
100
0.19
-
-
Max.
-
-
-
-
-
-
-
-
DS
DS
is rising from 0 to 80% V
is rising from 0 to 80% V
Unit
V
µA
nA


Unit
pF
ns
Note / Test Condition
V
V
V
T
V
T
V
V
T
V
T
f
Electrical characteristics
=1 MHz, open drain
j
j
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=25 °C
=150 °C
=
=650 V,
=650 V,
=0 V,
=20 V,
=10 V,
=10 V,
Note /
Test Condition
V
f
V
V
I
V
V
V
R
V
=1 MHz
D
Rev. 2.0, 2011-05-13
GS
GS
DS
DS
DD
GS
G
GS
=constant,
= 3.4 
=0...480 V
=0...480V
=0 V,
=0 V,
=400 V,
=13 V,
,
I
IPx65R190E6
I
D
D
V
I
I
(BR)DSS
=1.0 mA
D
D
=0.73 mA
V
V
(BR)DSS
DS
=7.3 A,
=7.3 A,
GS
GS
V
=0 V
I
DS
=0 V,
=0 V,
D
V
=11 A,
=100 V,
GS
=0 V