BSR315P Infineon Technologies, BSR315P Datasheet - Page 7
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BSR315P
Manufacturer Part Number
BSR315P
Description
Manufacturer
Infineon Technologies
Datasheet
1.BSR315P.pdf
(9 pages)
Specifications of BSR315P
Package
SC59
Vds (max)
-60.0 V
Rds (on) (max) (@10v)
800.0 mOhm
Rds (on) (max) (@4.5v)
1,300.0 mOhm
Rds (on) (max) (@2.5v)
-
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Part Number
Manufacturer
Quantity
Price
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Part Number:
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Manufacturer:
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Manufacturer:
INFINEON/英飞凌
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Rev 1.05
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
0.1
70
65
60
55
50
AV
1
=f(T
-60
); R
1
j
GS
); I
j(start)
=25 W
D
-20
=-250 µA
10
20
t
T
AV
j
[°C]
[µs]
60
100
125 °C
100
100 °C
140
25 °C
1000
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
g(th)
8
6
4
2
0
gs(th)
GS
gate
0
); I
DD
Q
D
=-0.62 A pulsed
gs
1
Q
2
Q
12 V
g
gate
Q
sw
[nC]
Q
gd
30 V
3
48 V
4
BSR315P
2012-03-15
Q
gate
5