BSD314SPE H6327 Infineon Technologies, BSD314SPE H6327 Datasheet - Page 3

• Manufacturer Part Number: BSD314SPE H6327
• Manufacturer: Infineon Technologies

Specifications of BSD314SPE H6327

• Package: SOT-363
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 140.0 mOhm
• Rds (on) (max) (@4.5v): 230.0 mOhm
• Rds (on) (max) (@2.5v): -

Rev 2.2
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
V
V
V
I
V
I
V
T
V
T
V
di
D
D
page 3
A
j
GS
DS
DD
GS
DD
GS
GS
R
=-1.5 A, R
=-1.5 A,
=25 °C
F
=25 °C
=-15 V, I
/dt =100 A/µs
=-15 V, f =1 MHz
=0 V,
=-15V,
=-10 V,
=-15 V,
=0 to -10 V
=0 V, I
F
=-1.5A,
F
G
=-1.5A,
=6 Ω
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
12.4
12.5
typ.
221
126
-0.7
-0.3
-2.9
-3.2
5.1
3.9
2.8
0.8
4.3
7
-
-
BSD314SPE
max.
-0.5
-6.1
294
168
1.1
11
-
-
-
-
-
-
-
-
-
-
Unit
pF
ns
nC
V
A
V
ns
nC
2011-07-14