SIGC223T120R2CL Infineon Technologies, SIGC223T120R2CL Datasheet
SIGC223T120R2CL
Specifications of SIGC223T120R2CL
Related parts for SIGC223T120R2CL
SIGC223T120R2CL Summary of contents
Page 1
... Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment Edited by INFINEON Technologies HV3, L 7121-P, Edition 2.1, 14.09.2011 SIGC223T120R2CL This chip is used for: IGBT-Modules BSM150GB120DLC Applications: drives I Die Size ...
Page 2
... SWITCHING CHARACTERISTICS (tested at component), Inductive Load: Parameter Turn-on delay time Rise time Turn-off delay time Fall time 1) values also influenced by parasitic L- and C- in measurement and package. Edited by INFINEON Technologies HV3, L 7121-P, Edition 2.1, 14.09.2011 SIGC223T120R2CL Symbol jmax C I jmax ...
Page 3
... CHIP DRAWING: Edited by INFINEON Technologies HV3, L 7121-P, Edition 2.1, 14.09.2011 SIGC223T120R2CL ...
Page 4
... Life support devices or systems are intended to be implanted in the human body support and / or maintain and sustain and / or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies HV3, L 7121-P, Edition 2.1, 14.09.2011 SIGC223T120R2CL BSM150GB120DLC Half-Bridge 62mm ...