SIGC223T120R2CL Infineon Technologies, SIGC223T120R2CL Datasheet - Page 2

• Manufacturer Part Number: SIGC223T120R2CL
• Manufacturer: Infineon Technologies

Specifications of SIGC223T120R2CL

• Technology: Low Loss IGBT 2
• Vds (max): 1,200.0 V
• Ic (max): 150.0 A
• Vce(sat) (max): 2.6 V
• Vge(th) (min): 4.5 V

MAXIMUM RATINGS:
Parameter
Collector-emitter voltage, T j =25 C
DC collector current, limited by T
Pulsed collector current, t
Gate emitter voltage
Operating junction and storage temperature
1 )
STATIC CHARACTERISTICS (tested on chip), T j =25 C, unless otherwise specified:
Parameter
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
DYNAMIC CHARACTERISTICS (tested at component):
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
1)
Edited by INFINEON Technologies AI PS DD HV3, L 7121-P, Edition 2.1, 14.09.2011
values also influenced by parasitic L- and C- in measurement and package.
depending on thermal properties of assembly
p
limited by T
jmax
jmax
V
V
V
I
I
C
C
C
t
t
t
t
CES
GES
Symbol
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
(BR)CES
CE(sat)
GE(th)
i s s
o s s
r s s
V
V
f=1MHz
T
V
I
V
R
V
C
j
C E
G E
C C
G E
V
V
G
I
CE
= 125 C
=150A
V
C
= 5 . 6
GE
CE
GE
=6mA , V
=1200V , V
=25V,
= 0 V ,
= 60 0 V,
= 1 5V ,
Conditions
SIGC223T120R2CL
Conditions
Conditions
=15V, I
=0V , V
=0V , I
V
I
I
V
T
C
c p u l s
j
C E
G E
, T
Symbol
s t g
C
C
GE
GE
=8 mA
=150A
=20V
=V
GE
1)
=0V
CE
min.
min.
1200
min.
1.8
4.5
-55 ... +150
-
-
-
-
-
-
-
Value
1200
450
1 )
20
typ.
typ.
Value
Value
Value
typ.
570
2.2
5.5
0.7
11
50
50
40
-
max.
max.
max.
18.2
600
2.6
6.5
-
-
-
-
-
-
-
Unit
°C
Unit
nF
Unit
ns
V
A
A
V
Unit
µA
nA
V