BFR840L3RHESD Infineon Technologies, BFR840L3RHESD Datasheet - Page 5

• Manufacturer Part Number: BFR840L3RHESD
• Manufacturer: Infineon Technologies

Specifications of BFR840L3RHESD

• Packages: TSLP-3-9
• Vceo (max): 2.25 V
• Ic(max): 35.0 mA
• Nfmin (typ): -
• Gmax (typ): -
• Oip3: -

List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Figure 15
Figure 16
Figure 17
Figure 18
Figure 19
Figure 20
Figure 21
Figure 22
Figure 23
Figure 24
Figure 25
Data Sheet
BFR840L3RHESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
DC Current Gain
Base Current vs. Base Emitter Reverse Voltage
3rd Order Intercept Point at output
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Marking Example (Marking BFR840L3RHESD: T8). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Total Power Dissipation
Collector Current vs. Collector Emitter Voltage
Collector Current vs. Base Emitter Forward Voltage
Base Current vs. Base Emitter Forward Voltage
Transition Frequency
3rd Order Intercept Point at output
Compression Point at output
Collector Base Capacitance
Gain
Maximum Power Gain
Maximum Power Gain
Input Matching
Source Impedance for Minimum Noise Figure
Output Matching
Noise Figure
Noise Figure
Noise Figure
G
ma
,
G
ms
NF
NF
NF
, I
S
S
11
min
min
50
S
h
21
22
FE
=
=
I² =
=
=
=
f
f
=
f
f
f
(
(
T
f
G
G
(
(
I
f
f
f
I
C
(
=
P
f
(
(
C
max
max
),
),
I
f
f
),
),
tot
),
f
C
),
V
V
),
(
V
V
V
I
=
=
=
C
CE
CE
V
C
OP
V
CE
CE
CE
),
f
CB
f
f
CE
CE
= 1.8 V,
= 1.8 V,
(
(
(
= 1.8 V,
= 1.8 V,
f
T
I
V
= 1.8 V,
1dB
= f
C
= 1.8 V,
= 2 GHz,
s
= 1.8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
CE
),
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
OIP
OIP
[dBm]=
),
V
(
V
CE
I
C
CB
3
3
I
Z
= 1.8 V,
= 10 mA,
I
Z
=
[dBm] =
C
I
),
S
C
I
C
S
= 5 / 10 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
C
f
5
= 50 Ω,
f
V
= 5 / 10 / 15 mA,
= 10 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
=
f
(
= 5 / 10 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
CE
I
(
= 1 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
C
Z
I
Z
),
C
I
opt
= Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
opt
C
,
I
I
Z
V
f
B
f
,
B
=
S
f
f
(
=
CE
=
=
f
= Parameter in GHz . . . . . . . . . . . . . . . . . . . . 22
I
f
=
I
C
= Parameter in GHz . . . . . . . . . . . . . . . . . . . 22
f
= Parameter in GHz . . . . . . . . . . . . . . . . . . . 25
),
(
f
= Parameter in GHz . . . . . . . . . . . . . . . . . . 25
C
f
),
V
Z
(
(
(
=
Z
V
V
L
f
CE
Z
= 50 Ω,
S
) ,
BE
EB
S
f
),
=
(
=
),
),
V
V
I
Z
B
Z
BE
Z
V
CE
V
L
L
= Parameter . . . . . . . . . . . . . . . . . 16
S
= 50 Ω,
CE
CE
),
= 50 Ω,
= 1.8 V,
=
V
V
= 1.8 V . . . . . . . . . . . . . . . . . . . 17
= 1.8 V . . . . . . . . . . . . . . . . . . . 18
CE
Z
CE
opt
,
= 1.8 V . . . . . . . . . . . . . . . . 17
f
f
. . . . . . . . . . . . . . . . . . . . . 24
V
= Parameter . . . . . . . . . . 19
I
CE
= 5.5 GHz . . . . . . . . . . . 20
C
,
= 5 / 10 / 15 mA . . . . 23
Revision 1.0, 2012-04-19
f
BFR840L3RHESD
= Parameters . . . . 20
List of Figures