BFR840L3RHESD Infineon Technologies, BFR840L3RHESD Datasheet - Page 8

• Manufacturer Part Number: BFR840L3RHESD
• Manufacturer: Infineon Technologies

Specifications of BFR840L3RHESD

• Packages: TSLP-3-9
• Vceo (max): 2.25 V
• Ic(max): 35.0 mA
• Nfmin (typ): -
• Gmax (typ): -
• Oip3: -

Robust ultra low noise SiGe:C Bipolar RF Transistor in very small
thin package
2
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Applications
As Low Noise Amplifier (LNA) in
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Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name Package
BFR840L3RH
ESD
Data Sheet
Robust ultra low noise amplifier based on Infineon´s reliable
high volume SiGe:C bipolar technology
Unique combination of high end RF performance and robustness:
high maximum RF input power, 1.5 kV HBM ESD hardness
Very high transition frequency
best in class noise performance at high frequencies:
NF
High gain |
Ideal for low voltage applications e.g.
(2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
Low power consumption, ideal for mobile applications
Pb- and halogen free (RoHS compliant) very small thin leadless package
(package height 0.31 mm, ideal for modules)
Mobile and fixed connectivity applications: WLAN 802.11, WiMAX and UWB
Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass)
and C-band LNB (1st and 2nd stage LNA)
Ku-band LNB front-end (2nd stage or 3rd stage LNA and active mixer)
Ka-band oscillators (DROs)
min
= 0.65 dB at 5.5 GHz, 1.1 dB at 12 GHz, 1.8 V, 5 mA
Features
S
21
TSLP-3-9
|
2
= 19 dB @ 5.5 GHz, 10 mA, 1.8 V
1 = B
f
T
= 75 GHz enables
V
CC
= 1.2 V and 1.8 V
2 = E
Pin Configuration
8
3 = C
Revision 1.0, 2012-04-19
BFR840L3RHESD
Marking
T8