BFP740ESD Infineon Technologies, BFP740ESD Datasheet - Page 10

• Manufacturer Part Number: BFP740ESD
• Manufacturer: Infineon Technologies

Specifications of BFP740ESD

• Packages: SOT343
• Vceo (max): 4.2 V
• Ic(max): 35.0 mA
• Nfmin (typ): 0.6 dB
• Gmax (typ): 27.0 dB
• Oip3: 25.0 dBm

3
Table 3
Parameter
Collector emitter voltage
Collector emitter voltage
Collector emitter voltage
Base current
Collector current
RF input power
ESD stress pulse
Total power dissipation
Junction temperature
Storage temperature
1) Low
2)
3) Sustainable reverse bias current is high due to integrated protection circuits.
4) ESD robustness is high due to integrated protection circuits.
5) T
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Data Sheet
V
S
CES
is the soldering point temperature. T
V
is identical to
CBO
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
3)
Maximum Ratings
Maximum Ratings at
due to integrated protection circuits
4)
V
CEO
5)
1)
2)
due to integrated protection circuits.
Symbol
V
V
V
I
I
P
V
P
T
T
B
C
T
J
Stg
CEO
CBO
CES
RFin
ESD
tot
A
= 25°C (unless otherwise specified)
S
measured on the emitter lead at the soldering point of the pcb.
Min.
–
–
–
–
–
–
-10
–
–
-2
–
–
-55
10
Values
Max.
4.2
3.7
4.9
4.4
4.2
3.7
5
45
21
2
160
150
150
Unit
V
V
V
V
V
V
mA
mA
dBm
kV
mW
°C
°C
Note / Test Condition
Open base
T
T
Open emitter
T
T
Emitter / base shortened
T
T
–
–
–
HBM, all pins, acc. to
JESD22-A114
T
–
–
Revision 1.0, 2010-06-29
A
A
A
A
A
A
S
= 25°C
= -55 °C
= 25°C
= -55 °C
= 25°C
= -55 °C
≤ 98 °C
Maximum Ratings
BFP740ESD