BFP740ESD Infineon Technologies, BFP740ESD Datasheet - Page 7

• Manufacturer Part Number: BFP740ESD
• Manufacturer: Infineon Technologies

Specifications of BFP740ESD

• Packages: SOT343
• Vceo (max): 4.2 V
• Ic(max): 35.0 mA
• Nfmin (typ): 0.6 dB
• Gmax (typ): 27.0 dB
• Oip3: 25.0 dBm

Robust High Performance Low Noise RF Bipolar Transistor
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Applications
As Low Noise Amplifier (LNA) in
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As discrete active mixer, amplifier in VCOs and buffer amplifier
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name Package
BFP740ESD
Data Sheet
Robust high performance low noise amplifier based on
Infineon´s reliable, high volume SiGe:C wafer technology
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
0.65 dB minimum noise figure typical at 2.4 GHz,
0.9 dB at 5.5 GHz, 6 mA
25.5 dB maximum gain (
18.5 dB at 5.5 GHz, 25 mA
24 dBm
Accurate SPICE GP model available to enable effective
design in process (see chapter 6)
Easy to use, Pb- and halogen free (RoHS compliant) standard package with visible leads
Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB,
Bluetooth
Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
and C-band LNB
Multimedia applications such as mobile/portable TV, CATV, FM Radio
3G/4G UMTS/LTE mobile phone applications
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
OIP
Features
3
SOT343
typical at 5.5 GHz, 25 mA
G
ma
,
1 = B
G
ms
) typical at 2.4 GHz,
2 = E
Pin Configuration
7
3 = C
4 = E
4
3
Revision 1.0, 2010-06-29
BFP740ESD
Marking
T7s
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2