UPC2709T-E3 NEC, UPC2709T-E3 Datasheet

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UPC2709T-E3

Manufacturer Part Number
UPC2709T-E3
Description
Manufacturer
NEC
Datasheet

Specifications of UPC2709T-E3

Dc
N/A

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DESCRIPTION
NEC's UPC2709T and UPC2712T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable as buffer amplifiers for wide-band
applications. They are designed for low cost gain stages in
cellular radios, GPS receivers, DBS tuners, PCN, and test/
measurement equipment.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
FEATURES
• WIDE FREQUENCY RESPONSE: 2.5 GHz
• HIGH GAIN: 23 dB (UPC2709T)
• SATURATED OUTPUT POWER:
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
Date Published: June 28, 2005
ELECTRICAL CHARACTERISTICS
SYMBOLS
CHANGE OVER TEMPERATURE
+11.5 dBm (UPC2709T)
RL
ISOL
P
P
RL
R
I
NF
G
CC
f
SAT
G
1dB
G
OUT
U
TH
S
IN
S
T
Circuit Current (no signal)
Small Signal Gain
Upper Limit Operating Frequency
(The gain at f
Gain Flatness, f = 0.1 ~ 1.8 GHz
Saturated Output Power
Output Power at 1 dB Compression Point
Noise Figure
Input Return Loss
Output Return Loss
Isolation
Gain -Temperature Coefficient
Thermal Resistance (Junction to Ambient)
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
PARAMETERS AND CONDITIONS
U
PACKAGE OUTLINE
is 3 dB down from the gain at 0.1 GHz)
f = 0.1 ~ 2.0 GHz
PART NUMBER
UPC2709T, UPC2712T
WIDE-BAND AMPLIFIER
2.5 GHz SILICON MMIC
(T
A
= 25 C, f = 1 GHz, V
UNITS
dB/ C
CC
GHz
dBm
dBm
C/W
mA
dB
dB
dB
dB
dB
dB
= 5 V)
20
10
30
25
15
MIN
2.0
19
21
26
9
7
7
0
UPC2709T
0.5
UPC2712
-0.002
TYP
11.5
T06
GAIN vs. FREQUENCY
2.3
7.5
25
23
10
10
31
1.0
5
Frequency, f (GHz)
1.0
MAX
26.5
200
6.5
32
1.5
UPC2709
2.0
MIN
2.2
18
10
28
9
0
9
UPC2712T
2.5
-0.003
TYP
T06
-2.5
2.6
4.5
12
20
12
13
33
0.8
3
3.0
MAX
23.5
200
15
6

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