APT15GP60S Microsemi Corporation, APT15GP60S Datasheet

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APT15GP60S

Manufacturer Part Number
APT15GP60S
Description
POWER MOS 7 IGBT
Manufacturer
Microsemi Corporation
Datasheet
The POWER MOS 7
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
T
Symbol
V
V
SSOA
BV
V
V
J
CE(ON)
V
GE(TH)
I
I
I
,T
I
I
GEM
P
GES
T
CES
CES
CM
C1
C2
GE
CES
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage (V
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
1
CE
CE
CE
Microsemi Website - http://www.microsemi.com
@ T
= V
= 600V, V
= 600V, V
GE
GE
• 200 kHz operation @ 400V, 12A
• SSOA rated
• 100 kHz operation @ 400V, 19A
C
C
C
GE
GE
= 25°C
= 15V, I
= 15V, I
J
= 25°C
= 110°C
, I
= ±20V)
= 150°C
C
= 1mA, T
GE
GE
GE
C
C
®
= 0V, I
= 0V, T
= 0V, T
= 15A, T
= 15A, T
IGBT
j
= 25°C)
C
j
j
= 25°C)
= 125°C)
= 250µA)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
MIN
600
3
APT15GP60B
APT15GP60S
APT15GP60B_S
65A @ 600V
-55 to 150
TYP
4.5
2.2
2.1
±20
±30
600
250
300
56
27
65
±100
MAX
2500
250
2.7
6
G
600V
Watts
Amps
UNIT
UNIT
Volts
Volts
µA
nA
°C
C
E

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APT15GP60S Summary of contents

Page 1

... 600V 0V 25° 600V 0V 125° ±20V) GE Microsemi Website - http://www.microsemi.com APT15GP60B APT15GP60S 600V G = 25°C unless otherwise specified. C UNIT APT15GP60B_S 600 ±20 Volts ± Amps 65 65A @ 600V 250 Watts -55 to 150 °C 300 ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP Q 3 Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc SSOA Switching Safe Operating ...

Page 3

15V. 250µs PULSE TEST <0.5 % DUTY CYCLE =25° =-55° =125° 0.5 1 1 COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE ...

Page 4

V = 10V 15V 400V 25°C or 125° 5Ω 100 µ ...

Page 5

V , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.60 0.50 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0.05 SINGLE PULSE ...

Page 6

APT15DF60 D.U.T. Figure 21, Inductive Switching Test Circuit 90% Gate Voltage Collector Voltage t t d(off) f 90% 10% Switching Energy Collector Current Figure 23, Turn-off Switching Waveforms and Definitions TO-247 (B) Package ...

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