APT15GP60S Microsemi Corporation, APT15GP60S Datasheet - Page 3

• Manufacturer Part Number: APT15GP60S
• Description: POWER MOS 7 IGBT
• Manufacturer: Microsemi Corporation

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Breakdown Voltage vs. Junction Temperature
1.15
1.10
1.05
0.95
0.85
100
3.5
2.5
1.5
0.5
1.2
1.0
0.9
0.8
30
25
20
15
10
80
60
40
20
5
0
0
3
2
1
0
-50
FIGURE 1, Output Characteristics(V
0
0
6
V
<0.5 % DUTY CYCLE
<0.5 % DUTY CYCLE
CE
250µs PULSE TEST
250µs PULSE TEST
V
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
GE
T
-25
GE
V GE = 15V.
T
C
0.5
, GATE-TO-EMITTER VOLTAGE (V)
J
2
=125°C
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
8
T J = 125°C
0
T
1
4
T J = 25°C
C
=25°C
10
25
I
C
=30A
1.5
T J = -55°C
6
I
50
C
12
= 15A
<0.5 % DUTY CYCLE
2
8
250µs PULSE TEST
I
C
75
= 7.5A
T J = 25°C.
T
C
14
2.5
=-55°C
10
GE
100
= 15V)
125
16
12
3
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
3.5
2.5
1.5
0.5
30
25
20
15
10
16
14
12
10
80
70
60
50
40
30
20
10
5
0
8
6
4
2
0
3
2
1
0
0
FIGURE 2, Output Characteristics (V
-50
-50
0
0
V
T
<0.5 % DUTY CYCLE
I
CE
<0.5 % DUTY CYCLE
250µs PULSE TEST
C
J
250µs PULSE TEST
= 25°C
= 15A
, COLLECTER-TO-EMITTER VOLTAGE (V)
-25
V GE = 10V.
-25
V GE = 15V.
0.5
T
10
C
T
T
=125°C
C
J
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
, Junction Temperature (°C)
0
0
GATE CHARGE (nC)
I
20
C
1
V
T
25
=30A
C
CE
=25°C
25
= 300V
V
1.5
CE
30
50
= 120V
50
I
C
75
= 15A
40
2
V
75
CE
100 125 150
I
C
T
= 480V
C
2.5
= 7.5A
50
GE
=-55°C
100
= 10V)
125
60
3