APT15GP60S Microsemi Corporation, APT15GP60S Datasheet - Page 2

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APT15GP60S

Manufacturer Part Number
APT15GP60S
Description
POWER MOS 7 IGBT
Manufacturer
Microsemi Corporation
Datasheet
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
Symbol
Symbol
SSOA
adding to the IGBT turn-on loss. (See Figure 24.)
loss. A Combi device is used for the clamping diode as shown in the E
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
V
R
R
C
t
t
t
t
E
E
E
E
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
W
on1
on2
off
Q
GEP
ΘJC
ΘJC
on1
on2
on1
on2
oes
t
t
t
t
res
ies
off
off
ge
gc
r
f
r
f
g
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (With Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (With Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
ces
includes both IGBT and diode leakages
3
66
6
4
4
4
5
55
Inductive Switching (125°C)
15V, L = 100µH,V
T
Inductive Switching (25°C)
J
= 150°C, R
V
GE
Test Conditions
Capacitance
Gate Charge
T
= 0V, V
V
V
V
T
V
V
V
on2
f = 1 MHz
J
R
R
CE
I
CC
I
J
CC
I
GE
GE
GE
C
C
C
= +125°C
= +25°C
G
G
test circuit. (See Figures 21, 22.)
= 15A
= 15A
= 15A
= 300V
= 400V
= 400V
= 15V
= 15V
= 15V
= 5Ω
= 5Ω
G
CE
= 5Ω, V
CE
= 25V
= 600V
GE
=
MIN
MIN
65
1685
TYP
TYP
210
130
152
121
130
267
268
7.5
15
55
12
15
12
29
58
12
69
88
8
8
MAX
MAX
5.90
N/A
.50
UNIT
°C/W
UNIT
gm
pF
nC
µ
ns
µ
ns
V
A
J
J

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